中文版 | English

个人主页

关键词云

成果统计

合作作者[TOP 5]

  • 黄健

    合作成果数：36

  • 邓卓

    合作成果数：33

  • 谢治阳

    合作成果数：23

  • 陈垚江

    合作成果数：20

  • 邹新波

    合作成果数：18

访问统计


  总访问量
 2161
  访问来源
    内部： 139
    外部： 2022
    国内： 1857
    国外： 304

  年访问量
 271
  访问来源
    内部： 2
    外部： 269
    国内： 256
    国外： 15

  月访问量
 8
  访问来源
    内部： 0
    外部： 8
    国内： 8
    国外： 0

访问量

访问量

1. Sub-monolayer quantum dot quantum cascade mid-infrared photodetect.. [2832]
2. Direct growth of InAs/GaSb type II superlattice photodiodes on sil.. [1076]
3. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1075]
4. High-Speed 850 nm Photodetector for Zero-Bias Operation [890]
5. Strain evolution and confinement effect in InAs/AlAs short-period .. [797]
6. Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR A.. [775]
7. Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrare.. [750]
8. Large Photomultiplication by Charge-Self-Trapping for High-Respons.. [718]
9. Dynamic model and bandwidth characterization of InGaAs/GaAsSb type.. [694]
10. High Speed and High Power Photodiode with 50 GHz Bandwidth [693]
11. High Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector [674]
12. InAs/GaSb superlattice photodetector with cutoff wavelength around.. [646]
13. Deep levels analysis in wavelength extended InGaAsBi photodetector [599]
14. Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodete.. [595]
15. Dark current and noise analysis for Long-wavelength infrared HgCdT.. [586]
16. Optical properties of beryllium-doped GaSb epilayers grown on GaAs.. [584]
17. Design of InP-Based High-Speed Photodiode for 2-mu m Wavelength Ap.. [583]
18. Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave .. [568]
19. Uni-Traveling Carrier Photodiode for High Speed and High Power App.. [562]
20. Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolit.. [558]
21. InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength [558]
22. Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Su.. [554]
23. Demonstration of Si based InAs/GaSb type-II superlattice p-i-n pho.. [537]
24. 一种InP基超宽光谱光电探测器及其制备方法 [530]
25. Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photo.. [504]
26. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [502]
27. 一种850nm波段零偏压工作的光电探测器的外延结构 [497]
28. Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown .. [494]
29. Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodete.. [494]
30. Active Region Design and Gain Characteristics of InP-Based Dilute .. [491]
31. High-speed uni-traveling carrier photodiode for 2 mu m wavelength .. [489]
32. Single-pixel p-graded-n junction spectrometers [475]
33. Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector Wit.. [463]
34. High-Speed Mid-Infrared Interband Cascade Photodetector Based on I.. [462]
35. Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN .. [449]
36. Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrar.. [446]
37. 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength a.. [445]
38. Poling-assisted hydrofluoric acid wet etching of thin-film lithium.. [432]
39. Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrar.. [431]
40. Ultra-Fast Waveguide MUTC Photodiodes Over 220 GHz [430]
41. Submonolayer quantum dot quantum cascade long-wave infrared photod.. [422]
42. Characterization of Deep Levels in InP Based InGaAsBi Photodetecto.. [420]
43. 25 GHz Bandwidth High Speed Photodiode for Two-Micron Wavelength A.. [415]
44. Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes .. [408]
45. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [404]
46. High-speed uni-travelling carrier photodiode at 1064nm wavelength [402]
47. Two-Stage Interband Cascade Infrared Photodetector Based on InAs/G.. [398]
48. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [396]
49. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [395]
50. Optical gain analysis of GaAs-based InGaAs/GaAsSbBi type-II quantu.. [393]
51. 具有渐变带隙吸收层结构的单像素探测器微型光谱仪 [384]
52. Defect characterization of AlInAsSb digital alloy avalanche photod.. [380]
53. Low-loss compact chalcogenide microresonators for efficient stimul.. [379]
54. High-operating-temperature MWIR photodetector based on a InAs/GaSb.. [374]
55. 一种基于InAs//InAsSb二类超晶格的中红外波段光电探测器 [367]
56. Large tunable bandgaps in the InAs/AlAs strain-compensated short-p.. [361]
57. Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photo.. [351]
58. Broadband chaos of an interband cascade laser with a 6-GHz bandwid.. [351]
59. High-speed partial-depleted-absorber photodiode based on GaAs/AlGa.. [349]
60. High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Q.. [349]
61. Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With.. [347]
62. High-speed mid-wave infrared interband cascade photodetector at ro.. [346]
63. High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking [346]
64. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [345]
65. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector B.. [342]
66. InGaP/AlGaAs Near-UV and Visible Avalanche Photodiodes for Li-Fi A.. [342]
67. Low excess noise HgCdTe e-SWIR avalanche photodiode operating at h.. [342]
68. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [340]
69. Low-Latency and High-Speed Hollow-Core Fiber Optical Interconnecti.. [338]
70. High-speed Ge-on-GaAs photodetector [338]
71. Characteristics of thin InAlAs digital alloy avalanche photodiodes [337]
72. Short-wavelength infrared InAs/GaSb superlattice hole avalanche ph.. [334]
73. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Supe.. [334]
74. Low frequency noise-dark current correlations in HgCdTe infrared p.. [333]
75. Mid-infrared chaos and chaotic lidar based on interband cascade la.. [329]
76. Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared .. [320]
77. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K a.. [317]
78. Interband transitions of InAs/AlAs Short-Period superlattices grow.. [317]
79. High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Travelin.. [313]
80. 100-Gbps 100-m hollow-core fiber optical interconnection at 2-micr.. [309]
81. High-Speed Photodetector With Simultaneous Electrical Power Genera.. [308]
82. A chip-integrated comb-based microwave oscillator [307]
83. InP based SWIR dual-band photodetector [302]
84. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector w.. [302]
85. Study on high gain-bandwidth product HgCdTe MWIR electron avalanch.. [301]
86. InP-Based Extended-Short Wave Infrared Heterojunction Phototransis.. [294]
87. Carrier localization effect in the photoluminescence of In composi.. [291]
88. High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Sho.. [289]
89. Equivalent Circuit Model of the RF Characteristics of Multi-Stage .. [288]
90. Research on high gain-bandwidth product mid-wavelength infrared Hg.. [288]
91. InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Pho.. [283]
92. Large redshift in photoluminescence of InAs/AlAs short-period supe.. [282]
93. Defect characterization of InAs/InGaAs quantum dot photodetector g.. [280]
94. 1.55微米波段雪崩光电探测器及其制备方法 [279]
95. Analysis of AM-to-PM conversion in MUTC photodiodes based on an eq.. [273]
96. 850nm波段吸收区部分耗尽光电探测器及其制备方法 [271]
97. GaAs-Based Modified Uni-Traveling Carrier Photodetector for Simult.. [265]
98. 一种基于二型量子阱的双波段红外光电探测器 [264]
99. Quantum Dot Avalanche Photodetector on Si Substrate [259]
100. 用于中红外波段的半导体光电探测器及其制备方法 [255]

下载量

1. Sub-monolayer quantum dot quantum cascade mid-infrared photodetect.. [630]
2. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [495]
3. Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR A.. [315]
4. Direct growth of InAs/GaSb type II superlattice photodiodes on sil.. [305]
5. High Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector [263]
6. Strain evolution and confinement effect in InAs/AlAs short-period .. [221]
7. Ultra-Fast Waveguide MUTC Photodiodes Over 220 GHz [83]
8. Mid-infrared chaos and chaotic lidar based on interband cascade la.. [60]
9. Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrare.. [25]
10. Single-pixel p-graded-n junction spectrometers [21]
11. InAs/GaSb superlattice photodetector with cutoff wavelength around.. [17]
12. Characterization of Deep Levels in InP Based InGaAsBi Photodetecto.. [14]
13. InGaP/AlGaAs Near-UV and Visible Avalanche Photodiodes for Li-Fi A.. [14]
14. High-Speed 850 nm Photodetector for Zero-Bias Operation [12]
15. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Supe.. [12]
16. Poling-assisted hydrofluoric acid wet etching of thin-film lithium.. [11]
17. 25 GHz Bandwidth High Speed Photodiode for Two-Micron Wavelength A.. [10]
18. Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Su.. [10]
19. Broadband chaos of an interband cascade laser with a 6-GHz bandwid.. [10]
20. Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodete.. [9]
21. High-Speed Mid-Infrared Interband Cascade Photodetector Based on I.. [9]
22. High-speed uni-traveling carrier photodiode for 2 mu m wavelength .. [8]
23. InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength [7]
24. Deep levels analysis in wavelength extended InGaAsBi photodetector [7]
25. Characteristics of thin InAlAs digital alloy avalanche photodiodes [7]
26. Low excess noise HgCdTe e-SWIR avalanche photodiode operating at h.. [7]
27. Design of InP-Based High-Speed Photodiode for 2-mu m Wavelength Ap.. [6]
28. High-speed uni-travelling carrier photodiode at 1064nm wavelength [6]
29. High Speed and High Power Photodiode with 50 GHz Bandwidth [6]
30. Low-Frequency Noise Spectroscopy Characterization of HgCdTe Infrar.. [6]
31. 具有渐变带隙吸收层结构的单像素探测器微型光谱仪 [6]
32. Demonstration of Si based InAs/GaSb type-II superlattice p-i-n pho.. [5]
33. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [5]
34. High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking [5]
35. Exploiting the Correlation between 1/f Noise-Dark Current in PIN I.. [5]
36. Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodete.. [4]
37. 一种850nm波段零偏压工作的光电探测器的外延结构 [4]
38. InP-Based Extended-Short Wave Infrared Heterojunction Phototransis.. [4]
39. High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Travelin.. [4]
40. Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector Wit.. [3]
41. Two-Stage Interband Cascade Infrared Photodetector Based on InAs/G.. [3]
42. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [3]
43. Large tunable bandgaps in the InAs/AlAs strain-compensated short-p.. [3]
44. 一种基于InAs//InAsSb二类超晶格的中红外波段光电探测器 [3]
45. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector w.. [3]
46. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [3]
47. Low-loss compact chalcogenide microresonators for efficient stimul.. [3]
48. Characterizing third-order intermodulation distortion of photodete.. [3]
49. Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave .. [2]
50. Uni-Traveling Carrier Photodiode for High Speed and High Power App.. [2]
51. Dynamic model and bandwidth characterization of InGaAs/GaAsSb type.. [2]
52. Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes .. [2]
53. Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photo.. [2]
54. Submonolayer quantum dot quantum cascade long-wave infrared photod.. [2]
55. 850nm波段吸收区部分耗尽光电探测器及其制备方法 [2]
56. 用于中红外波段的半导体光电探测器及其制备方法 [2]
57. Analysis of AM-to-PM conversion in MUTC photodiodes based on an eq.. [2]
58. Large Photomultiplication by Charge-Self-Trapping for High-Respons.. [2]
59. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector B.. [2]
60. 1.55微米波段雪崩光电探测器及其制备方法 [2]
61. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [2]
62. High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Sho.. [2]
63. Equivalent Circuit Model of the RF Characteristics of Multi-Stage .. [2]
64. High-speed Ge-on-GaAs photodetector [2]
65. High-Speed Photodetector With Simultaneous Electrical Power Genera.. [2]
66. High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Q.. [2]
67. Interband transitions of InAs/AlAs Short-Period superlattices grow.. [2]
68. Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes with .. [2]
69. Multi-stage infrared detectors [2]
70. Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche p.. [2]
71. Active Region Design and Gain Characteristics of InP-Based Dilute .. [1]
72. Optical properties of beryllium-doped GaSb epilayers grown on GaAs.. [1]
73. Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolit.. [1]
74. Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN .. [1]
75. Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrar.. [1]
76. Defect characterization of AlInAsSb digital alloy avalanche photod.. [1]
77. InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Pho.. [1]
78. Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With.. [1]
79. Low frequency noise-dark current correlations in HgCdTe infrared p.. [1]
80. Short-wavelength infrared InAs/GaSb superlattice hole avalanche ph.. [1]
81. High-speed mid-wave infrared interband cascade photodetector at ro.. [1]
82. Quantum Dot Avalanche Photodetector on Si Substrate [1]
83. 30 GHz GeSn photodetector on SOI substrate for 2 mu m wavelength a.. [1]
84. InP based SWIR dual-band photodetector [1]
85. 一种基于二型量子阱的双波段红外光电探测器 [1]
86. 一种单载流子光电探测器 [1]
87. Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared .. [1]
88. Dark current and noise analysis for Long-wavelength infrared HgCdT.. [1]
89. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [1]
90. Carrier localization effect in the photoluminescence of In composi.. [1]
91. Monte Carlo Simulation of High-Speed MWIR HgCdTe e-APD [1]
92. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [1]
93. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [1]
94. A chip-integrated comb-based microwave oscillator [1]
95. Ultrafast Waveguide MUTC Photodiode with a 3dB Bandwidth of 240 GH.. [1]
96. High Temperature Tolerant Mid-Wavelength Infrared Avalanche Photod.. [1]
97. 基于WR5.1金属波导封装的G波段太赫兹光电混频模块 [1]
98. High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visibl.. [1]