上海科技大学知识管理系统

In this work, we demonstrate two InGaP/AlGaAs heterojunction avalanche photodiodes with Al component of 0.8 and 0.6 for Li-Fi applications in near-UV and visible light bands. The devices exhibit high multiplication gain, low dark current, and low excess noise factor. By incorporating an InGaP p-layer with a low recombination velocity, we overcome the issue of low UV and near-UV response caused by the high surface recombination of GaAs and AlGaAs materials. The {Al0.8Ga0.2As} device with a recessed window showed an external quantum efficiency (EQE) of 13.12% at 355 nm and 27.12% at 405 nm, with a peak EQE of 38.72% at 440 nm. The {Al0.6Ga0.4As} device exhibits a peak EQE of 43.55% at 540 nm. Furthermore, the photodiodes demonstrate a 3 dB bandwidth of up to 1.59 GHz at 405 nm and 1.12GHz at 520 nm at 99% breakdown voltage. This indicates their future potential for applications in short-distance visible and near-UV light communications. © 1989-2012 IEEE.