Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures

doi:10.1116/6.0003298

	Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures
	Qu, Haolan1,2,3 ; Huang, Wei 4; Zhang, Yu1,2,3 ; Sui, Jin1,2,3 ; Chen, Jiaxiang1,2,3 ; Chen, Baile1 ; Zhang, David Wei 4; Wang, Yuangang 5; Lv, Yuanjie 5; Feng, Zhihong 5; Zou, Xinbo1,6
	2024-03-01
发表期刊	JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS (IF:2.4[JCR-2023],2.6[5-Year])
ISSN	0734-2101
EISSN	1520-8559
卷号	42 期号:2
发表状态	已发表
DOI	10.1116/6.0003298
摘要	Electrical and trap characteristics of a large-size (2 × 2 mm2) β-Ga2O3 Schottky barrier diode (SBD) from 50 to 350 K have been reported. The ideality factor (n) decreases from 1.34 to nearly unity as temperature rises from 50 to 350 K, demonstrating near-ideal Schottky characteristics. The leakage current at cryogenic temperature (100 K) was significantly suppressed, indicating excellent off-state blocking performance at low temperatures. The weak temperature dependence of the carrier concentration (NS) and Schottky barrier height (ΦB) infers stable electrical characteristics of the β-Ga2O3 SBD. The stressed current density-voltage (J-V) and on-the-fly measurements reveal reliable dynamic performance under harsh low temperature conditions. Via deep-level transient spectroscopy, an electron trap, which is related to the dynamic performance instability and Lorentzian hump in low frequency noise spectra, is revealed for a β-Ga2O3 epilayer. The study reveals enormous potential of the utilization of a large-size β-Ga2O3 SBD for extreme temperature environments. © 2024 Author(s).
关键词	Carrier concentration Cryogenics Gallium compounds Semiconductor metal boundaries Temperature distribution Blocking performance Cryogenic temperatures Dynamic performance Electrical performance Ideality factors Lows-temperatures Off state Schottky characteristics Temperature dependence Temperature rise
收录类别	EI
语种	英语
出版者	AVS Science and Technology Society
EI入藏号	20240715552589
EI主题词	Schottky barrier diodes
EI分类号	641.1 Thermodynamics ; 644.4 Cryogenics ; 701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349717
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_博士生
通讯作者	Zou, Xinbo
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China 3.School of Microelectronics, University of Chinese Academy of Sciences, Beijing; 100049, China 4.School of Microelectronics, Fudan University, Shanghai; 200433, China 5.The National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Hebei, Shijiazhuang; 050051, China 6.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai; 200031, China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Qu, Haolan,Huang, Wei,Zhang, Yu,et al. Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures[J]. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS,2024,42(2).
APA	Qu, Haolan.,Huang, Wei.,Zhang, Yu.,Sui, Jin.,Chen, Jiaxiang.,...&Zou, Xinbo.(2024).Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures.JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS,42(2).
MLA	Qu, Haolan,et al."Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures".JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS 42.2(2024).