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Neutron irradiation and polarization effect of 4H–SiC Schottky detector 期刊论文
NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH, SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 2024, 卷号: 1064
作者:  Long, Ze;  Xia, Xiaochuan;  Jiang, Wei;  Jing, Hantao;  Zou, Xinbo
Adobe PDF(6826Kb)  |  收藏  |  浏览/下载：59/0  |  提交时间：2024/04/26
Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment 期刊论文
MICROELECTRONICS JOURNAL, 2024, 卷号: 148
作者:  Zhu, Yitai;  Zhang, Yu;  Qu, Haolan;  Gao, Han;  Du, Haitao
Adobe PDF(4805Kb)  |  收藏  |  浏览/下载：21/0  |  提交时间：2024/06/11
Nonlinear Capacitance Compensation Method for Integrating a Metal-Semiconductor-Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier 期刊论文
ELECTRONICS, 2024, 卷号: 13, 期号: 7
作者:  Li, Ke;  Gu, Yitian;  Guo, Haowen;  Zou, Xinbo
Adobe PDF(9388Kb)  |  收藏  |  浏览/下载：30/0  |  提交时间：2024/05/14
Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures 期刊论文
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS, 2024, 卷号: 42, 期号: 2
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Chen, Jiaxiang
Adobe PDF(3333Kb)  |  收藏  |  浏览/下载：76/0  |  提交时间：2024/02/23
Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 135, 期号: 8
作者:  Chen, Jiaxiang;  Qu, Haolan;  Sui, Jin;  Lu, Xing;  Zou, Xinbo
Adobe PDF(3256Kb)  |  收藏  |  浏览/下载：101/15  |  提交时间：2024/03/22
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy 期刊论文
JOURNAL OF SEMICONDUCTORS, 2024, 卷号: 45, 期号: 3
作者:  Jin Sui;  Jiaxiang Chen;  Haolan Qu;  Yu Zhang;  Xing Lu
Adobe PDF(4177Kb)  |  收藏  |  浏览/下载：67/0  |  提交时间：2024/04/06
Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium 期刊论文
NETWORKS AND HETEROGENEOUS MEDIA, 2024, 卷号: 19, 期号: 1, 页码: 456-474
作者:  Du, Chunlin;  Zhang, Yu;  Qu, Haolan;  Guo, Haowen;  Zou, Xinbo
Adobe PDF(5647Kb)  |  收藏  |  浏览/下载：25/0  |  提交时间：2024/05/14
Radiation effects of high-fluence reactor neutron on Ni/β-Ga2O3 Schottky barrier diodes 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 1
作者:  Zhou, Leidang;  Chen, Hao;  Xu, Tongling;  Ruan, Jinlu;  Lai, Yuru
Adobe PDF(1Kb)  |  收藏  |  浏览/下载：46/0  |  提交时间：2024/03/04
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1
作者:  Yu Zhang;  Renqiang Zhu;  Haolan Qu;  Yitian Gu;  Huaxing Jiang
Adobe PDF(1470Kb)  |  收藏  |  浏览/下载：45/0  |  提交时间：2024/06/11
545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2024, 卷号: PP, 期号: 99, 页码: 1-1
作者:  Han Gao;  Yitian Gu;  Yu Zhang;  Jialun Li;  Junmin Zhou
Adobe PDF(2787Kb)  |  收藏  |  浏览/下载：70/0  |  提交时间：2024/04/16