High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors

doi:10.1109/JLT.2022.3171224

	High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors
	Zongti Wang1,2 ; Jian Huang1,2 ; Liqi Zhu1,2 ; Zhiqi Zhou1,2 ; Xuyi Zhao 3; Antian Du 3; Wenfu Yu 3; Ruotao Liu 3; Qian Gong 3; Baile Chen1,2
	2022
发表期刊	JOURNAL OF LIGHTWAVE TECHNOLOGY (IF:4.1[JCR-2023],4.1[5-Year])
ISSN	1558-2213
卷号	40 期号:15
发表状态	已发表
DOI	10.1109/JLT.2022.3171224
摘要	In this paper, a vertical stacked near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band detector based on InGaAs and In0.53Ga0.47As/GaAs0.5Sb0.5 type-II superlattice (T2SL) is presented. A barrier layer of AlAs0.56Sb0.44 allows the independent working of the two sub-detectors. The InGaAs NIR sub-detector operates under positive bias, while the eSWIR band detector operates under reverse bias. The NIR sub-detector shows a dark current density of 7.35 × 10−5 A/cm2 under the bias of 0.1 V, the responsivity of 0.88 A/W, and a specific detectivity of 4.69 × 1011 cm· Hz1/2/W at 1510 nm. Meanwhile, the dark current density of eSWIR sub-detector is 8.68 × 10−4 A/cm2 under −0.4 V with the corresponding responsivity of 0.21 A/W, and a specific detectivity of 1.85×1010 cm·Hz1/2/W at 2 μm. Furthermore, a single-pixel imaging system is built to demonstrate the capability of dual-band detectors in information capturing and target recognition.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/180941
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China 3.Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zongti Wang,Jian Huang,Liqi Zhu,et al. High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2022,40(15).
APA	Zongti Wang.,Jian Huang.,Liqi Zhu.,Zhiqi Zhou.,Xuyi Zhao.,...&Baile Chen.(2022).High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors.JOURNAL OF LIGHTWAVE TECHNOLOGY,40(15).
MLA	Zongti Wang,et al."High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors".JOURNAL OF LIGHTWAVE TECHNOLOGY 40.15(2022).