Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate
2019
会议录名称2019 DEVICE RESEARCH CONFERENCE, DRC 2019
ISSN1548-3770
卷号2019-June
页码165-166
发表状态已发表
DOI10.1109/DRC46940.2019.9046450
摘要

Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices.
© 2019 IEEE.

会议地点Ann Arbor, MI, USA
会议日期23-26 June 2019
URL查看原文
收录类别EI
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20201608433335
EI主题词Defects ; Gallium arsenide ; III-V semiconductors ; Lattice mismatch ; Nanocrystals ; Photodetectors ; Photons ; Quantum dot lasers ; Silicon ; Silicon photonics ; Substrates
EI分类号Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Semiconductor Lasers:744.4.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Crystal Lattice:933.1.1 ; Materials Science:951
原始文献类型Conference article (CA)
来源库IEEE
文献类型会议论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121520
专题信息科学与技术学院_硕士生
信息科学与技术学院_PI研究组_陈佰乐组
信息科学与技术学院_博士生
作者单位
1.Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China
2.Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara; CA; 93106, United States
3.Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul; 02792, Korea, Republic of
4.Materials Department, University of California Santa Barbara, Santa Barbara; CA; 93106, United States
5.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, Hong Kong
第一作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Huang, Jian,Wan, Yating,Jung, Daehwan,et al. Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate[C]:Institute of Electrical and Electronics Engineers Inc.,2019:165-166.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Huang, Jian]的文章
[Wan, Yating]的文章
[Jung, Daehwan]的文章
百度学术
百度学术中相似的文章
[Huang, Jian]的文章
[Wan, Yating]的文章
[Jung, Daehwan]的文章
必应学术
必应学术中相似的文章
[Huang, Jian]的文章
[Wan, Yating]的文章
[Jung, Daehwan]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。