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Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate | |
2019 | |
会议录名称 | 2019 DEVICE RESEARCH CONFERENCE, DRC 2019 |
ISSN | 1548-3770 |
卷号 | 2019-June |
页码 | 165-166 |
发表状态 | 已发表 |
DOI | 10.1109/DRC46940.2019.9046450 |
摘要 | Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices. |
会议地点 | Ann Arbor, MI, USA |
会议日期 | 23-26 June 2019 |
URL | 查看原文 |
收录类别 | EI |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
EI入藏号 | 20201608433335 |
EI主题词 | Defects ; Gallium arsenide ; III-V semiconductors ; Lattice mismatch ; Nanocrystals ; Photodetectors ; Photons ; Quantum dot lasers ; Silicon ; Silicon photonics ; Substrates |
EI分类号 | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Semiconductor Lasers:744.4.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Crystal Lattice:933.1.1 ; Materials Science:951 |
原始文献类型 | Conference article (CA) |
来源库 | IEEE |
文献类型 | 会议论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121520 |
专题 | 信息科学与技术学院_硕士生 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_博士生 |
作者单位 | 1.Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara; CA; 93106, United States 3.Center for Opto-Electronics Materials and Devices, Korea Institute of Science and Technology, Seoul; 02792, Korea, Republic of 4.Materials Department, University of California Santa Barbara, Santa Barbara; CA; 93106, United States 5.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, Hong Kong |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Huang, Jian,Wan, Yating,Jung, Daehwan,et al. Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate[C]:Institute of Electrical and Electronics Engineers Inc.,2019:165-166. |
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