High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice

doi:10.1109/LED.2022.3163660

	High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice
	Jian Huang1,2,3 ; Zhijian Shen1 ; Zongti Wang1 ; Zhiqi Zhou1 ; Ziyu Wang4 ; Bo Peng4 ; Weimin Liu4 ; Yiqiao Chen 2,5; Baile Chen1,6
	2022-05-01
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	1558-0563
卷号	43 期号:5
发表状态	已发表
DOI	10.1109/LED.2022.3163660
摘要	High-speed photodetectors operating at mid-wave infrared are crucial for free-space optical communication and frequency comb spectroscopy. In this letter, we report a high-speed mid-wave infrared uni-traveling carrier photodiode based on InAs/InAsSb type-II superlattice at room temperature for the first time. The device exhibits a cut-off wavelength of around 5.5 $\mu \text{m}$ at room temperature. The responsivity of the device is about 0.6 A/W (at 4.5 $\mu \text{m}$ ) under −1 V at room temperature. The frequency response of the device is characterized by an optical parametric amplification system generating mid-infrared femtosecond pulses. A device with a 20 $\mu \text{m}$ diameter has a 3-dB bandwidth of 12.8 GHz at −4 V. These promising results suggest that the device could be potential candidates to be employed in the emerging high-speed MWIR applications.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/169317
专题	物质科学与技术学院_硕士生信息科学与技术学院物质科学与技术学院_PI研究组_刘伟民组信息科学与技术学院_PI研究组_陈佰乐组物质科学与技术学院_博士生信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China 4.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China 5.Acken Optoelectronic Ltd., Suzhou, China 6.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Jian Huang,Zhijian Shen,Zongti Wang,et al. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice[J]. IEEE ELECTRON DEVICE LETTERS,2022,43(5).
APA	Jian Huang.,Zhijian Shen.,Zongti Wang.,Zhiqi Zhou.,Ziyu Wang.,...&Baile Chen.(2022).High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice.IEEE ELECTRON DEVICE LETTERS,43(5).
MLA	Jian Huang,et al."High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice".IEEE ELECTRON DEVICE LETTERS 43.5(2022).