Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

doi:10.1109/TED.2017.2665579

	Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers
	Chen, Baile
	2017-04
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	0018-9383
卷号	64 期号:4 页码:1606-1611
发表状态	已发表
DOI	10.1109/TED.2017.2665579
摘要	The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band k.p model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2-4 Am) operation at room temperature.
关键词	Dilute bismide GaAsSbBi mid-wavelength infrared optical gain type-II quantum well (QW)
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	Shanghai Tech University[F-0203-16-002]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:000398818400029
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20170903390987
EI主题词	Optical properties ; Quantum well lasers ; Semiconducting indium
WOS关键词	MOLECULAR-BEAM-EPITAXY ; PHOTODIODES ; ALLOYS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/1437
专题	信息科学与技术学院_PI研究组_陈佰乐组
通讯作者	Chen, Baile
作者单位	Shanghai Tech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Chen, Baile. Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64(4):1606-1611.
APA	Chen, Baile.(2017).Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers.IEEE TRANSACTIONS ON ELECTRON DEVICES,64(4),1606-1611.
MLA	Chen, Baile."Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers".IEEE TRANSACTIONS ON ELECTRON DEVICES 64.4(2017):1606-1611.