Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

doi:10.1109/ACCESS.2021.3072845

	Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array
	Yan Teng 1; Xiujun Hao2 ; Hong Zhu 2; He Zhu 1; Jiafeng Liu 1; Yunlong Huai 1; Meng Li 2; Ming Liu 3; Weirong Xing 3; Baile Chen4 ; Zhuo Deng4 ; Yong Huang 1
	2021
发表期刊	IEEE ACCESS (IF:3.4[JCR-2023],3.7[5-Year])
ISSN	2169-3536
卷号	9
发表状态	已发表
DOI	10.1109/ACCESS.2021.3072845
摘要	High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE). In this work, we demonstrate the first long-wavelength infrared InAs/GaSb superlattice FPA grown by metalorganic chemical vapor deposition (MOCVD) with clear image. High-quality superlattice material was obtained evidenced by sharp X-ray diffraction peaks and atomic flat surface. Electrical and optical measurements performed on single element detectors showed a 50% cut-off wavelength of $\sim 10.1~\mu \text{m}$ , a dark current density of $2.5\times 10^{-5}$ A/cm2, a peak responsivity of 0.88 A/W and a peak detectivity of $1.7\times 10^{11}$ cm $\cdot $ Hz1/2/W at 80 K. A $320\times256$ FPA with $30~\mu \text{m}$ pixel pitch was then fabricated. With an integration time of 1.9 ms and an applied bias of -0.1 V, the FPA shows an average operability of 96.96%, a non-uniformity of 4.97%, a noise equivalent temperature difference of 51.1 mK and a peak detectivity of $2.3\times 10^{10}$ cm $\cdot $ Hz1/2/W at 80 K without thinning down the substrate.
关键词	Long-wavelength infrared InAs/GaSb superlattice focal plane array metalorganic chemical vapor deposition
URL	查看原文
收录类别	EI ; SCIE
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/126475
专题	物质科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组物质科学与技术学院_博士生
作者单位	1.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China 2.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou, China 3.North China Research Institute of Electro-Optics, Beijing, China 4.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Yan Teng,Xiujun Hao,Hong Zhu,et al. Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array[J]. IEEE ACCESS,2021,9.
APA	Yan Teng.,Xiujun Hao.,Hong Zhu.,He Zhu.,Jiafeng Liu.,...&Yong Huang.(2021).Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array.IEEE ACCESS,9.
MLA	Yan Teng,et al."Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array".IEEE ACCESS 9(2021).