| |||||||
ShanghaiTech University Knowledge Management System
| Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode | |
| 2025-03-10 | |
| 发表期刊 | OPTICS EXPRESS (IF:3.2[JCR-2023],3.4[5-Year]) |
| ISSN | 1094-4087 |
| EISSN | 1094-4087 |
| 卷号 | 33期号:5页码:10591-10598 |
| 发表状态 | 已发表 |
| DOI | 10.1364/OE.555645 |
| 摘要 | This study introduces a digital alloy AlAsSb/GaAsSb avalanche photodiode (APD) on InP, demonstrating low dark current and low noise performance. The lattice-matched AlAsSb/GaAsSb APD structure exhibits a dark current density of 16 µA/cm2 at a gain of 10 and an excess noise factor near 2 at room temperature, attributed to high crystal quality and effective passivation. The dark current level achieved in this work is the lowest reported for Sb-based p-i-n APDs with a 1000 nm thick intrinsic region. These results make it highly promising for separate absorption, charge, and multiplication (SACM) structures in optical communication and LIDAR applications. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. |
| 关键词 | III-V semiconductors Indium phosphide 'current +GaAsSb Dark current densities Dark current noise Digital alloys InP Lattice-matched Low noise performance Lower noise Photodiode structures |
| URL | 查看原文 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 资助项目 | National Key Research and Development Program of China[2024YFA1208900,2019YFA0705203] ; National Natural Science Foundation of China[ |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| WOS记录号 | WOS:001446612700006 |
| 出版者 | Optica Publishing Group (formerly OSA) |
| EI入藏号 | 20251118051296 |
| EI主题词 | Avalanche photodiodes |
| EI分类号 | 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds |
| 原始文献类型 | Journal article (JA) |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/503669 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 |
| 作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.School of Electronic Science and Engineering, Nanjing University, Jiangsu, Nanjing; 210093, China; 3.National Key Laboratory of Infrared Detection Technologies, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai; 200083, China; 4.Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Ge, Huachen,Liang, Yan,Wang, Wenyang,et al. Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode[J]. OPTICS EXPRESS,2025,33(5):10591-10598. |
| APA | Ge, Huachen.,Liang, Yan.,Wang, Wenyang.,Wang, Zihao.,Zhu, Liqi.,...&Chen, Baile.(2025).Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode.OPTICS EXPRESS,33(5),10591-10598. |
| MLA | Ge, Huachen,et al."Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode".OPTICS EXPRESS 33.5(2025):10591-10598. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。