Small  $\textit{V}_{\text{th}}$  Shift and Low Dynamic  $\textit{R}_{\textsc{on}}$  in GaN MOSHEMT With ZrO $_{\text{2}}$  Gate Dielectric

doi:10.1109/TED.2023.3313999

	Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric
	Yu Zhang1 ; Yitian Gu1 ; Jiaxiang Chen1 ; Yitai Zhu1 ; Baile Chen1 ; Huaxing Jiang 2; Kei May Lau 3; Xinbo Zou1
	2023
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	1557-9646
EISSN	1557-9646
卷号	PP 期号:99 页码:5590-5595
发表状态	已发表
DOI	10.1109/TED.2023.3313999
摘要	The OFF-state stress-induced threshold voltage (Vth) instability and dynamic ON-resistance (RON) of GaN metal-oxide-semiconductor high-electron mobility transistor (MOSHEMT) with ZrO2 gate dielectric are thoroughly investigated. Upon negative gate bias stressing, a small threshold voltage shift of -0.31 V is observed and the deviation is attributed to the emission of electrons at the ZrO2/AlGaN interface. An emission activation energy of 0.28 eV and a capture activation energy of 0.30 eV are extracted by threshold voltage transient spectroscopy performed at various temperatures. When the device is exposed to OFF-state drain-source bias stressing, the drain current is found to decrease despite negative shift of Vth. A low dynamic RON of 2.05 is obtained by time-resolved measurements, given a 50-V drain voltage stressing for a duration of 100 s. The decrease in forward conductance is related to the capture of electrons in the access region, with a capture activation energy of 0.18 eV revealed by temperature-dependent drain current transient (DCT) analysis. The results indicate that high-quality ZrO2 represents an attractive high-k gate dielectric option for GaN MOSHEMTs in power switching electronics. © 1963-2012 IEEE.
关键词	Dynamic ON-resistance ( $\textit{R}_{\biosc{on}}$ ) GaN metal–oxide–semiconductor high-electron mobility transistor (MOSHEMT) threshold voltage ( $\textit{V}_{\text{th}}$ ) instability ZrOTEXPRESERVE13 dielectric
URL	查看原文
收录类别	SCI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20234014842449
EI主题词	Threshold voltage
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 708.1 Dielectric Materials ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 721.2 Logic Elements ; 721.3 Computer Circuits
原始文献类型	Journal article (JA)
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/333382
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, China 2.School of Microelectronics, South China University of Technology, Guangzhou, China 3.The Hong Kong University of Science and Technology, Sai Kung, Hong Kong
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yu Zhang,Yitian Gu,Jiaxiang Chen,et al. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2023,PP(99):5590-5595.
APA	Yu Zhang.,Yitian Gu.,Jiaxiang Chen.,Yitai Zhu.,Baile Chen.,...&Xinbo Zou.(2023).Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric.IEEE TRANSACTIONS ON ELECTRON DEVICES,PP(99),5590-5595.
MLA	Yu Zhang,et al."Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric".IEEE TRANSACTIONS ON ELECTRON DEVICES PP.99(2023):5590-5595.