High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping

doi:10.1109/TED.2022.3218489

	High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping
	Jian Huang1 ; Zhecheng Dai1 ; Zhijian Shen1 ; Zongti Wang1 ; Zhiqi Zhou1 ; Ziyu Wang2 ; Bo Peng2 ; Weimin Liu2 ; Baile Chen1,3
	2022-12-01
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	1557-9646
卷号	69 期号:12 页码:1-7
发表状态	已发表
DOI	10.1109/TED.2022.3218489
摘要	In this article, we studied two high-speed mid-wave infrared InAs/InAsSb type-II superlattice (T2SL) uni-traveling carrier (UTC) photodetectors (PDs) with different graded p-doping profiles in the absorber. It is found that the UTC device with higher absorber p-doping (hereafter referred to as Device A) has a larger 3-dB bandwidth than that of the device with lower absorber p-doping (hereafter referred to as Device B). However, Device A shows a higher dark current and lower responsivity performance than Device B. The peak responsivity of Devices A and B is about 0.9 and 1.2 A/W, respectively, under −1 V at room temperature. The performance comparisons of both devices are explored in detail. These results could contribute a further step toward developing high-speed InAs/InAsSb T2SL PDs.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/248908
专题	物质科学与技术学院_硕士生信息科学与技术学院物质科学与技术学院_PI研究组_刘伟民组信息科学与技术学院_PI研究组_陈佰乐组物质科学与技术学院_博士生信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China 3.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Jian Huang,Zhecheng Dai,Zhijian Shen,et al. High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2022,69(12):1-7.
APA	Jian Huang.,Zhecheng Dai.,Zhijian Shen.,Zongti Wang.,Zhiqi Zhou.,...&Baile Chen.(2022).High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping.IEEE TRANSACTIONS ON ELECTRON DEVICES,69(12),1-7.
MLA	Jian Huang,et al."High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping".IEEE TRANSACTIONS ON ELECTRON DEVICES 69.12(2022):1-7.