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| High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon | |
| 2023-04-01 | |
| 发表期刊 | IEEE JOURNAL OF QUANTUM ELECTRONICS (IF:2.2[JCR-2023],2.1[5-Year]) |
| ISSN | 0018-9197 |
| EISSN | 1558-1713 |
| 卷号 | 59期号:2 |
| 发表状态 | 已发表 |
| DOI | 10.1109/JQE.2023.3238754 |
| 摘要 | Monolithic integration of infrared photodetectors on a silicon platform is a promising solution for the development of scalable and affordable photodetectors and infrared focal plane arrays. We report on integration of submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth. Threading dislocation density has been reduced to the level of ∼ 107 cm-2 with the high-quality GaAs-on-Si virtual substrate. We also conducted a morphology analysis for the SML QD QCDs through a transmission electron microscope strain contrast image and to the best of our knowledge, high quality InGaAs/GaAs SML QDs were clearly observed on silicon for the first time. Photoluminescence decay time of the as-grown SML QD QCDs on Si was measured to be around 300 ps, which is comparable to the reference QCDs on lattice-matched GaAs substrates. With the high-quality III-V epitaxial layers and SML QDs, the quantum cascade detectors on Si achieved a normal incident photoresponse temperature up to 160 K under zero bias. © 1965-2012 IEEE. |
| 关键词 | allium arsenide III-V semiconductors Infrared detectors Molecular beam epitaxy Nanocrystals Photons Quantum cascade lasers Semiconducting gallium Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum dots Silicon Transmission electron microscopy High operating temperature High quality InGaAs/GaAs Midinfrared Molecular-beam epitaxy Monolithic integration Quantum cascade detectors Quantum dot Sub-monolayers Submonolayer quantum dot |
| URL | 查看原文 |
| 收录类别 | EI ; SCI ; SCOPUS |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[61974014] ; Innovation Group Project of Sichuan Province[20CXTD0090] |
| WOS研究方向 | Engineering ; Physics ; Optics |
| WOS类目 | Engineering, Electrical & Electronic ; Quantum Science & Technology ; Optics ; Physics, Applied |
| WOS记录号 | WOS:000932428200001 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20230613543960 |
| EI主题词 | Substrates |
| EI分类号 | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.1 Single Element Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 744.1 Lasers, General ; 761 Nanotechnology ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics ; 933.1 Crystalline Solids ; 933.1.2 Crystal Growth ; 944.7 Radiation Measuring Instruments |
| 原始文献类型 | Journal article (JA) |
| 来源库 | IEEE |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/282017 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_博士生 |
| 作者单位 | 1.Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China 2.Optoelectronic Devices Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai, China 3.Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA 4.Department of Electronic and Electrical Engineering, University College London, London, U.K |
| 推荐引用方式 GB/T 7714 | Daqian Guo,Jian Huang,Mourad Benamara,et al. High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS,2023,59(2). |
| APA | Daqian Guo.,Jian Huang.,Mourad Benamara.,Yuriy I. Mazur.,Zhuo Deng.,...&Jiang Wu.(2023).High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon.IEEE JOURNAL OF QUANTUM ELECTRONICS,59(2). |
| MLA | Daqian Guo,et al."High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon".IEEE JOURNAL OF QUANTUM ELECTRONICS 59.2(2023). |
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