Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber

doi:10.1109/JLT.2020.2994996

	Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber
	Yaojiang Chen1,2,3 ; Zhiqi Zhou1 ; Pingchuan Ma1 ; Baile Chen1
	2020
发表期刊	JOURNAL OF LIGHTWAVE TECHNOLOGY (IF:4.1[JCR-2023],4.1[5-Year])
ISSN	1558-2213
卷号	38 期号:17
发表状态	已发表
DOI	10.1109/JLT.2020.2994996
摘要	The linearity of high power photodetectors is the limiting factor to the dynamic range performance of analog optical links and microwave photonics applications. In this work, we characterized the third order intermodulation distortion (IMD3) of a uni-traveling carrier photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber. The 10 μm diameter photodiode shows a third order output intercept point of 36.6 dBm at 200 MHz and 12.9 dBm at 25 GHz, under reverse bias of -5 V and photo current of 15 mA. Combining with the measured device parameters, an equivalent circuit model based simulation is carried out, and the general trend of the simulated IMD3 is consistent with the measurement results. By separately involving the nonlinear mechanisms, the source of the nonlinearity is studied in detail.
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收录类别	SCI ; EI ; SCIE
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122197
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_本科生信息科学与技术学院_博士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,et al. Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2020,38(17).
APA	Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,&Baile Chen.(2020).Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber.JOURNAL OF LIGHTWAVE TECHNOLOGY,38(17).
MLA	Yaojiang Chen,et al."Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber".JOURNAL OF LIGHTWAVE TECHNOLOGY 38.17(2020).