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Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber
2020
发表期刊JOURNAL OF LIGHTWAVE TECHNOLOGY (IF:4.1[JCR-2023],4.1[5-Year])
ISSN1558-2213
卷号38期号:17
发表状态已发表
DOI10.1109/JLT.2020.2994996
摘要The linearity of high power photodetectors is the limiting factor to the dynamic range performance of analog optical links and microwave photonics applications. In this work, we characterized the third order intermodulation distortion (IMD3) of a uni-traveling carrier photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber. The 10 μm diameter photodiode shows a third order output intercept point of 36.6 dBm at 200 MHz and 12.9 dBm at 25 GHz, under reverse bias of -5 V and photo current of 15 mA. Combining with the measured device parameters, an equivalent circuit model based simulation is carried out, and the general trend of the simulated IMD3 is consistent with the measurement results. By separately involving the nonlinear mechanisms, the source of the nonlinearity is studied in detail.
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收录类别SCI ; EI ; SCIE
来源库IEEE
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122197
专题信息科学与技术学院
信息科学与技术学院_PI研究组_陈佰乐组
信息科学与技术学院_硕士生
信息科学与技术学院_本科生
信息科学与技术学院_博士生
作者单位
1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
3.University of Chinese Academy of Sciences, Beijing, China
第一作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
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Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,et al. Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2020,38(17).
APA Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,&Baile Chen.(2020).Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber.JOURNAL OF LIGHTWAVE TECHNOLOGY,38(17).
MLA Yaojiang Chen,et al."Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber".JOURNAL OF LIGHTWAVE TECHNOLOGY 38.17(2020).
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