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| Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber | |
| 2020 | |
| 发表期刊 | JOURNAL OF LIGHTWAVE TECHNOLOGY (IF:4.1[JCR-2023],4.1[5-Year]) |
| ISSN | 1558-2213 |
| 卷号 | 38期号:17 |
| 发表状态 | 已发表 |
| DOI | 10.1109/JLT.2020.2994996 |
| 摘要 | The linearity of high power photodetectors is the limiting factor to the dynamic range performance of analog optical links and microwave photonics applications. In this work, we characterized the third order intermodulation distortion (IMD3) of a uni-traveling carrier photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber. The 10 μm diameter photodiode shows a third order output intercept point of 36.6 dBm at 200 MHz and 12.9 dBm at 25 GHz, under reverse bias of -5 V and photo current of 15 mA. Combining with the measured device parameters, an equivalent circuit model based simulation is carried out, and the general trend of the simulated IMD3 is consistent with the measurement results. By separately involving the nonlinear mechanisms, the source of the nonlinearity is studied in detail. |
| URL | 查看原文 |
| 收录类别 | SCI ; EI ; SCIE |
| 来源库 | IEEE |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/122197 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_硕士生 信息科学与技术学院_本科生 信息科学与技术学院_博士生 |
| 作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,et al. Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY,2020,38(17). |
| APA | Yaojiang Chen,Zhiqi Zhou,Pingchuan Ma,&Baile Chen.(2020).Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber.JOURNAL OF LIGHTWAVE TECHNOLOGY,38(17). |
| MLA | Yaojiang Chen,et al."Nonlinear Characteristics of Uni-Traveling Carrier Photodiode With InGaAs/GaAsSb Type-II Multiple Quantum Wells Absorber".JOURNAL OF LIGHTWAVE TECHNOLOGY 38.17(2020). |
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