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成果统计

合作作者[TOP 5]

  • 陈嘉祥

    合作成果数：25

  • 屈昊岚

    合作成果数：23

  • 张羽

    合作成果数：19

  • 陈佰乐

    合作成果数：18

  • 顾怡恬

    合作成果数：17

访问统计


  总访问量
 1177
  访问来源
    内部： 81
    外部： 1096
    国内： 962
    国外： 215

  年访问量
 187
  访问来源
    内部： 2
    外部： 185
    国内： 172
    国外： 15

  月访问量
 45
  访问来源
    内部： 2
    外部： 43
    国内： 40
    国外： 5

访问量

访问量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1051]
2. Emission and Capture Kinetics of Minority Carrier Trap in GaN Devi.. [921]
3. Timing Performance Simulation for 3D 4H-SiC Detector [690]
4. 离散网络实验教学电路板及连接方法 [623]
5. Analysis of Abnormal GIDL Current Degradation Under Hot Carrier St.. [515]
6. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [498]
7. Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilaye.. [471]
8. Submonolayer quantum dot quantum cascade long-wave infrared photod.. [418]
9. Emission and Capture Characteristics of Electron Trap (Eemi = 0.8e.. [412]
10. Device Design Assessment of GaN Junction Barrier Schottky Diodes [406]
11. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [401]
12. Relaxation kinetics of interface states and bulk traps in atomic l.. [398]
13. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [392]
14. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [390]
15. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [373]
16. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [368]
17. Neutron irradiation and polarization effect of 4H–SiC Schottky de.. [360]
18. Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photo.. [347]
19. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [342]
20. High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking [340]
21. Simulation Study of Front-illuminated GaN APD with Hole-initiated .. [337]
22. High-speed Ge-on-GaAs photodetector [335]
23. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [335]
24. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Supe.. [332]
25. Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes .. [329]
26. Vertical beta-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdow.. [327]
27. Electrical characterization of GaN Schottky barrier diode at cryog.. [324]
28. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [314]
29. Suppressed current collapse and improved threshold voltage stabili.. [314]
30. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K a.. [313]
31. A review on GaN-based two-terminal devices grown on Si substrates [309]
32. Device Design Assessment of GaN Merged P-i-N Schottky Diodes [308]
33. Effect of 5 MeV proton irradiation on electrical and trap characte.. [306]
34. High-Speed Photodetector With Simultaneous Electrical Power Genera.. [302]
35. 一种垂直型氮化镓肖特基二极管器件及其制备方法 [295]
36. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector w.. [295]
37. 一种面向倍频应用的氮化镓双向导通二极管以及制作方法 [294]
38. 一种双异质结单极性晶体管的器件结构 [292]
39. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [292]
40. Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With.. [290]
41. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n het.. [284]
42. GaN Single Nanowire p-i-n Diode for High-Temperature Operations [279]
43. InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Pho.. [278]
44. Demonstration and modeling of frequency tripler based on GaN Schot.. [278]
45. Emission and capture characteristics of deep hole trap in n-GaN by.. [278]
46. Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimm.. [277]
47. Pulsed X-Ray Detector Based on an Unintentionally-Doped High Resis.. [272]
48. Nonlinear Capacitance Compensation Method for Integrating a Metal-.. [271]
49. Analysis of AM-to-PM conversion in MUTC photodiodes based on an eq.. [266]
50. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [256]
51. Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 su.. [251]
52. Trapping mechanism transition of γ-ray irradiation on p-GaN gat.. [251]
53. 一种Ⅲ族氮化物雪崩光电二极管组件及其制备方法 [248]
54. Acceleration of solving drift-diffusion equations enabled by estim.. [247]
55. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [246]
56. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [243]
57. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [241]
58. Study of Traps in p-GaN Gate HEMT by Optical DLTS [238]
59. 一种氮化镓增强型垂直型晶体管组件及其制作方法 [232]
60. Investigation of trapping effects in Schottky lightly doped P-GaN .. [228]
61. Radiation effects of high-fluence reactor neutron on Ni/β-Ga [221]
62. High Quality Factor AlScN Lamb Wave Resonators Using NbN/Al Top El.. [218]
63. Electrical Characterization of Vertical β-Ga2 O3 SBD w/o epi-laye.. [203]
64. High-Performance Machine Vision System by GaN n-i-n Nanowire [200]
65. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [194]
66. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [188]
67. Switching performance of quasi-vertical GaN-based p-i-n diodes on .. [180]
68. High Performance Monolithically Integrated GaN Driving VMOSFET on .. [175]
69. Electrical Characterization of β-Ga2O3 Power Diodes for Cryogenic.. [172]
70. Simulation study of front-illuminated GaN avalanche photodiodes wi.. [171]
71. Temperature-Dependent Electrical and Trap Properties of β-Ga2O3 S.. [162]
72. Low-Flicker Lighting From High-Voltage LEDs Driven by a Single Con.. [157]
73. Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compen.. [154]
74. Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance.. [151]
75. Transistors and tunnel diodes enabled by large-scale MoS2 nanoshee.. [139]
76. Investigation of interface and bulk traps in ZrO2/β-Ga2O3 metal-o.. [120]
77. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [71]
78. Dynamic Characteristics of Neutral Beam Etching Enabled Normally-o.. [66]
79. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [59]
80. ZrO2/β-Ga2O3 MOS器件的界面态和体陷阱物性研究 [26]
81. 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutraliz.. [22]
82. Nonlinear Characteristics Analysis of GaN p-i-n Diodes at Room and.. [12]
83. 氧化镓异质衬底集成技术研究进展 [5]

下载量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [478]
2. Timing Performance Simulation for 3D 4H-SiC Detector [204]
3. Relaxation kinetics of interface states and bulk traps in atomic l.. [46]
4. Radiation effects of high-fluence reactor neutron on Ni/β-Ga [25]
5. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Supe.. [12]
6. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [12]
7. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [10]
8. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [5]
9. High-Speed 46-GHz 850 nm Photodetector with Inductive Peaking [5]
10. Effect of 5 MeV proton irradiation on electrical and trap characte.. [4]
11. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [4]
12. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [3]
13. High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector w.. [3]
14. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [3]
15. Suppressed current collapse and improved threshold voltage stabili.. [3]
16. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [3]
17. Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photo.. [2]
18. Submonolayer quantum dot quantum cascade long-wave infrared photod.. [2]
19. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [2]
20. Analysis of AM-to-PM conversion in MUTC photodiodes based on an eq.. [2]
21. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [2]
22. High-speed Ge-on-GaAs photodetector [2]
23. High-Speed Photodetector With Simultaneous Electrical Power Genera.. [2]
24. High-Performance Machine Vision System by GaN n-i-n Nanowire [2]
25. High Quality Factor AlScN Lamb Wave Resonators Using NbN/Al Top El.. [2]
26. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [2]
27. InP-Based Near Infrared/Extended-Short Wave Infrared Dual-Band Pho.. [1]
28. 离散网络实验教学电路板及连接方法 [1]
29. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [1]
30. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [1]
31. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [1]
32. Analysis of Abnormal GIDL Current Degradation Under Hot Carrier St.. [1]
33. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [1]
34. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [1]
35. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [1]
36. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [1]
37. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [1]
38. Trapping mechanism transition of γ-ray irradiation on p-GaN gat.. [1]
39. Dynamic Characteristics of Neutral Beam Etching Enabled Normally-o.. [1]
40. 氧化镓异质衬底集成技术研究进展 [1]