Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison

doi:10.1109/TED.2017.2647990

	Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison
	Zhang Xu 1; Zou Xinbo2 ; Lu Xing 3; Chak Wah Tang 1; Kei May Lau 1
	2017
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	0018-9383
卷号	64 期号:3 页码:809-815
发表状态	已发表
DOI	10.1109/TED.2017.2647990
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286853
专题	信息科学与技术学院_PI研究组_邹新波组
通讯作者	Kei May Lau
作者单位	1.香港科技大学 2.上海科技大学 3.中山大学
推荐引用方式 GB/T 7714	Zhang Xu,Zou Xinbo,Lu Xing,et al. Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64(3):809-815.
APA	Zhang Xu,Zou Xinbo,Lu Xing,Chak Wah Tang,&Kei May Lau.(2017).Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison.IEEE TRANSACTIONS ON ELECTRON DEVICES,64(3),809-815.
MLA	Zhang Xu,et al."Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison".IEEE TRANSACTIONS ON ELECTRON DEVICES 64.3(2017):809-815.