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合作作者[TOP 5]

  • 邹新波

    合作成果数：8

  • 顾怡恬

    合作成果数：6

  • 郭好文

    合作成果数：4

  • 叶文博

    合作成果数：4

  • 屈昊岚

    合作成果数：3
高涵 硕士生
所在学院： 信息科学与技术学院
职务： --
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高涵

科研成果

8 1288 33 6 0 1
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 [1] Han Gao,Yitian Gu,Yudong Li,et al. Neutral Beam Etching Enabled Recessed-gate Emode Gan Moshemt: A Multi-vth Power Device Platform For All-gan Monolithic Integration[C]. International Symposium On Power Semiconductor Devices And Ics.2025-03-01.浏览/下载:42/3评论推荐收藏
 [2] Wenbo Ye,Junmin Zhou,Han Gao,Haowen Guo,Yitian Gu,&Xinbo Zou.(2025).1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES,PP(99).浏览/下载:65/4; 被引[WOS]:0; IF:2.9/2.9评论推荐收藏
 [3] Wenbo Ye,Junmin Zhou,Han Gao,et al. 1.48 Db-noise Figure E-mode Recessed-gate Gan Moshemt By Neutralized Ion Beam Etching For Lna Applications[C]. The 11th Asia-pacific Workshop On Widegap Semiconductors.2024-10-17.浏览/下载:12/0评论推荐收藏
 [4] Han Gao,Yitian Gu,Yitai Zhu,et al. Ion Beam Etching Enabled Recessed-gate E-mode Gan Mos-hemt With Fom Of 701 Mw·cm-2 And Monolithic Integrated Digital Circuit[C]. Asia-pacific Workshop On Widegap Semiconductors.2024-07-01.浏览/下载:286/12评论推荐收藏
 [5] Zhu, Yitai.,Zhang, Yu.,Qu, Haolan.,Gao, Han.,Du, Haitao.,...&Zou, Xinbo.(2024).Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment.MICROELECTRONICS JOURNAL,148.浏览/下载:305/3; 被引[WOS]:1评论推荐收藏
 [6] Chen JX.,Du HT.,Qu HL.,Gao H.,Gu YT.,...&Zou XB.(2024).AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing.APL MACHINE LEARNING.浏览/下载:191/10; 被引[WOS]:0评论推荐收藏
 [7] Chen, Jiaxiang,Qu, Haolan,Du, Haitao,et al. Temperature-dependent Electrical And Trap Properties Of Β-ga2o3 Schottky Barrier Diodes W/o Homoepitaxial Layer[C]. The 11th Asia-pacific Workshop On Widegap Semiconductors (apws).2024-01-01.浏览/下载:148/0评论推荐收藏
 [8] Han Gao.,Yitian Gu.,Yu Zhang.,Jialun Li.,Junmin Zhou.,...&Xinbo Zou.(2024).545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching.IEEE ELECTRON DEVICE LETTERS,PP(99),1-1.浏览/下载:239/1; 被引[WOS]:5; IF:4.1/4.2评论推荐收藏