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成果统计

合作作者[TOP 5]

  • 邹新波

    合作成果数：8

  • 顾怡恬

    合作成果数：7

  • 叶文博

    合作成果数：5

  • 周隽民

    合作成果数：4

  • 郭好文

    合作成果数：4

访问统计


  总访问量
 324
  访问来源
    内部： 3
    外部： 321
    国内： 300
    国外： 24

  年访问量
 106
  访问来源
    内部： 1
    外部： 105
    国内： 96
    国外： 10

  月访问量
 7
  访问来源
    内部： 0
    外部： 7
    国内： 7
    国外： 0

访问量

访问量

1. Suppressed current collapse and improved threshold voltage stabili.. [321]
2. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [295]
3. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [251]
4. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [196]
5. Temperature-Dependent Electrical and Trap Properties of β-Ga2O3 S.. [172]
6. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [75]
7. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [72]
8. 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutraliz.. [27]
9. Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration .. [12]

下载量

1. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [12]
2. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [10]
3. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [4]
4. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [4]
5. Suppressed current collapse and improved threshold voltage stabili.. [3]
6. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [1]
7. Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration .. [1]