1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications

doi:10.1109/TED.2025.3534157

	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
	Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu; Xinbo Zou
	2025
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	1557-9646
EISSN	1557-9646
卷号	PP 期号:99
发表状态	已发表
DOI	10.1109/TED.2025.3534157
摘要	In this study, the device properties of gallium nitride (GaN) enhancement-mode (E-mode) recessed-gate high-electron-mobility transistor (HEMT) are thoroughly characterized and investigated for low-noise amplifier (LNA) applications. Through low-damage argon-based neutral beam etching (Ar-NBE) technology, the recessed-gate HEMT achieves a positive voltage threshold (VTH) of 0.5 V, a maximum transconductance (gm) of 148 mS/mm, and an ON-state gate leakage current (IG) of 2.39 nA/mm. The device reveals a 1.48-dB minimum noise figure (NFmin), a 14.43-dB associated gain (Ga), and a 40.2-Ω equivalent noise resistance (RN), at a working frequency of 2 GHz. As the frequency increases to 3.5 GHz, the NFmin slightly increases to 1.95 dB. In addition, the device obtained a cutoff frequency (fT/fMAX) of 9.6/27.8 GHz and an input third-order interception point (IIP3) of 10.3 dBm at 2 GHz. This work provides a promising strategy for the implementation of high-performance E-mode LNAs.
关键词	Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20250717875052
EI主题词	Gallium nitride
EI分类号	1106.3 Digital Signal Processing ; 701.1 Electricity: Basic Concepts and Phenomena ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 716.1 Information Theory and Signal Processing ; 744 Lasers and Masers
原始文献类型	Article in Press
来源库	IEEE
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/484000
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_博士生
作者单位	School of Information Science and Technique (SIST), ShanghaiTech University, Shanghai, China
第一作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Wenbo Ye,Junmin Zhou,Han Gao,et al. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2025,PP(99).
APA	Wenbo Ye,Junmin Zhou,Han Gao,Haowen Guo,Yitian Gu,&Xinbo Zou.(2025).1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES,PP(99).
MLA	Wenbo Ye,et al."1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications".IEEE TRANSACTIONS ON ELECTRON DEVICES PP.99(2025).