上海科技大学知识管理系统

Recessing etching of AlGaN barrier to deplete 2DEG under gate is regarded as a promising solution to achieve normally-off operations of GaN HEMTs and to meet fail-safe requirement in power applications. Ion beam etching (IBE), which features focused beam of inert gas ions for precise material removal through physical bombardment, shows great potential in fine control of device structure and mitigation of plasma-induced damage brought by conventional methods such as Cl-based ICP-RIE. In this work, high-performance normally-off GaN MOSHEMT is successfully demonstrated and associated logic components are explicitly investigated