上海科技大学知识管理系统

In this work, a power device platform enabled by neutral beam etching (NBE)-based recessed-gate E-mode GaN MOSHEMT is demonstrated. In addition to high performance normally-off single power transistor, the platform also provides feasibility of integrating devices with various threshold voltages to build power modules and driver circuits, towards a practical all-GaN monolithic integration scheme. By partially recessing the AlGaN barrier via unimpaired etching, the MOSHEMT achieved a threshold voltage (Vth) of 1.68 V, saturation drain current of 803 mA/mm, and small onresistance of 5.85 Ω·mm, leading to a FOM of 701 MW/cm2. Devices with different threshold voltages were fabricated on one single wafer by altering recessing thickness to accommodate various application specifications and integration schemes. Besides demonstration of reverse conduction device via integrating normally-off transistors and diodes, binary and multi-value logics are also implemented. Binary inverter achieved nearly full-range logic swing voltage of 7.98 V/8 V(99.8%), together with sub-microsecond rise and fall time. By integrating un-recessed D-mode device and Emode MOSHEMTs with three different Vth, quaternary NAND and NOR logic gates have been well characterized with output of four levels, showing their great potential in enhancing digital processing capability for driving, facilitating next-generation all-GaN monolithic integration.