Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance

doi:10.1109/ICIPRM.2019.8819308

	Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance
	Lu, Xing 1,2; Zhang, Xu 2; Jiang, Huaxing 2; Zou, Xinbo3 ; Lau, Kei May 2
	2019-05-23
会议录名称	2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
发表状态	已发表
DOI	10.1109/ICIPRM.2019.8819308
摘要	In this study, we developed $\beta$-Ga2O3-based vertical Schottky barrier diodes (SBDs) and investigated their switching performance. The devices were fabricated by epitaxy of an $\mathrm{n}^{-}-\beta$-Ga2O3 drift layer on an n-type (001) $\beta$ -Ga2O3 substrate and using Pt as the Schottky metal. The SBDs showed an excellent Schottky contact with a low ideality factor of ~1.02 and a high on/off current ratio $(\mathrm{I}_{\mathrm{ON}}/\mathrm{I}_{\mathrm{OFF}})$ of over 6 orders of magnitude at −300 V. The reverse recovery characterization of the $\beta$-Ga2O3 SBD was performed and compared with a commercial Si fast-recovery diode (FRD). When switching from an on-state current of 350 mA to a reverse-blocking voltage of −100 V, the vertical $\beta$-Ga2O3 SBD exhibits fast reverse recovery with a reverse recovery time $(\mathrm{t}_{\mathrm{rr}})$ of ~14.1 ns and reverse recovery charge $(\mathrm{Q}_{\mathrm{rr}})$ of ~ 0.34 nC, outperforming the Si FRD of similar ratings. In addition, the Si FRD showed significantly increased $\mathrm{t}_{\mathrm{rr}}$ and $\mathrm{Q}_{\mathrm{rr}}$ when the on-state current was set higher, while the $\beta$-Ga2O3 SBDs exhibited similar behavior when switched-off from various level of on-state current. The results demonstrate the great potential of $\beta$-Ga2O3 SBDs for high-speed switching applications.
关键词	Switches Silicon Substrates Schottky diodes Schottky barriers Voltage Performance evaluation
会议地点	Nara, Japan
会议日期	19-23 May 2019
URL	查看原文
收录类别	CPCI ; CPCI-S
来源库	IEEE
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/121911
专题	信息科学与技术学院_PI研究组_邹新波组
通讯作者	Lu, Xing
作者单位	1.Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou, Peoples R China 2.Hong Kong Univ Sci & Technol, ECE Dept, Hong Kong, Peoples R China 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Lu, Xing,Zhang, Xu,Jiang, Huaxing,et al. Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance[C],2019.