Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN

doi:10.1088/1361-6641/aa7247

	Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN
	Pak San Yip 1; Zou Xinbo1,2 ; Wai Ching Cho 1; Kam Lam Wu 1; Kei May Lau 1,2
	2017
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IF:1.9[JCR-2023],1.9[5-Year])
ISSN	1361-6641
发表状态	已发表
DOI	10.1088/1361-6641/aa7247
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286851
专题	信息科学与技术学院_PI研究组_邹新波组
通讯作者	Kei May Lau
作者单位	1.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology (HKUST), Hong Kong 2.Institute for Advanced Study (IAS), Hong Kong University of Science and Technology (HKUST), Hong Kong
推荐引用方式 GB/T 7714	Pak San Yip,Zou Xinbo,Wai Ching Cho,et al. Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017.
APA	Pak San Yip,Zou Xinbo,Wai Ching Cho,Kam Lam Wu,&Kei May Lau.(2017).Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN.SEMICONDUCTOR SCIENCE AND TECHNOLOGY.
MLA	Pak San Yip,et al."Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN".SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017).