Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT

doi:10.1016/j.pedc.2025.100087

	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
	Yitai zhu1 ; Haitao Du1 ; Yu Zhang1 ; Haolan Qu1 ; Haodong Jiang1,2,3 ; Wenhui Xu2,3 ; Xin Ou 2,3; Xinbo Zou1
	2025-04
发表期刊	POWER ELECTRONIC DEVICES AND COMPONENTS
ISSN	2772-3704
EISSN	2772-3704
卷号	11
发表状态	已发表
DOI	10.1016/j.pedc.2025.100087
摘要	Dynamic performances of recessed-gate GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) enabled by argon-based neutral beam etching (Ar-NBE) are comprehensively investigated. Upon positive gate stressing, a minimal shift of + 0.27 V in the threshold voltage (Vth) is observed, due to capture of electrons by interface traps at the Al2O3/AlGaN interface. Dynamic ON-resistance (Ron) and drain current degradation are also studied by applying various drain voltage values and durations. Moreover, interface characterizations by conductance method and deep-level transient spectroscopy (DLTS) both confirm the superior interface quality achieved by NBE processing, with a low interface trap density (Dit) of 1.19 × 1012 cm-2 eV-1. The results underscore NBE recessing as an attractive approach for manufacturing highly-reliable normally-off GaN MOSHEMTs for next-generation high-frequency power conversion systems. © 2025
关键词	Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
收录类别	SCI ; EI
语种	英语
出版者	Elsevier B.V.
EI入藏号	20251318121109
EI主题词	Gallium nitride
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds ; 1301.1.3.1 Spectroscopy
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/493646
专题	信息科学与技术学院_硕士生信息科学与技术学院_PI研究组_邹新波组物质科学与技术学院_博士生信息科学与技术学院_博士生
通讯作者	Xinbo Zou
作者单位	1.School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, China. 2.School of Microelectronics, University of Chinese Academy of Sciences, Beijing, China. 3.Shanghai Institute of Microsystem and Information Technology, Shanghai, China.
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yitai zhu,Haitao Du,Yu Zhang,et al. Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT[J]. POWER ELECTRONIC DEVICES AND COMPONENTS,2025,11.
APA	Yitai zhu.,Haitao Du.,Yu Zhang.,Haolan Qu.,Haodong Jiang.,...&Xinbo Zou.(2025).Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT.POWER ELECTRONIC DEVICES AND COMPONENTS,11.
MLA	Yitai zhu,et al."Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT".POWER ELECTRONIC DEVICES AND COMPONENTS 11(2025).

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