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合作作者[TOP 5]

  • Xin Ou

    合作成果数：8

  • Tiangui You

    合作成果数：7

  • Fengwen Mu

    合作成果数：6

  • Genquan Han

    合作成果数：6

  • Tadatomo Suga

    合作成果数：6
徐文慧 博士生
所在学院： 物质科学与技术学院
职务： --
研究方向：
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徐文慧

科研成果

10 3046 34 240 0 7
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 [1] Yitai zhu.,Haitao Du.,Yu Zhang.,Haolan Qu.,Haodong Jiang.,...&Xinbo Zou.(2025).Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT.POWER ELECTRONIC DEVICES AND COMPONENTS.浏览/下载:57/1评论推荐收藏
 [2] Xu, Wenhui.,You, Tiangui.,Mu, Fengwen.,Shen, Zhenghao.,Lin, Jiajie.,...&Ou, Xin.(2022).Thermodynamics of Ion-Cutting of beta-Ga2O3 and Wafer-Scale Heterogeneous Integration of a beta-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate.ACS APPLIED ELECTRONIC MATERIALS,4(1).浏览/下载:209/0; 被引[WOS]:19评论推荐收藏
 [3] Wenhui Xu.,Tiangui You.,Yibo Wang.,Zhenghao Shen.,Kang Liu.,...&Xi Wang.(2021).Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC.FUNDAMENTAL RESEARCH.浏览/下载:219/1; 被引[WOS]:0; IF:5.7/5.7评论推荐收藏
 [4] Yibo Wang,Wenhui Xu,Genquan Han,et al. Channel Mobility Properties Of Β-ga2o3 Mosfets On Si Substrate Fabricated By Ion-cutting Process[C]. 2021 5th Ieee Electron Devices Technology & Manufacturing Conference (edtm).2021-04-01.浏览/下载:55/0; 被引[WOS]:1评论推荐收藏
 [5] Yibo Wang.,Wenhui Xu.,Genquan Han.,Tiangui You.,Fengwen Mu.,...&Haoyue.(2021).Channel Properties of Ga₂O₃-on-SiC MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES.浏览/下载:234/1; 被引[WOS]:25; IF:2.9/2.9评论推荐收藏
 [6] Yibo Wang.,Wenhui Xu.,Genquan Han.,Tiangui You.,Fengwen Mu.,...&Yue Hao.(2020).Temperature-Dependent Characteristics of Schottky Barrier Diode on Heterogeneous beta-Ga2O3( -201)-Al2O3-Si Substrate.JOURNAL OF PHYSICS D-APPLIED PHYSICS.浏览/下载:316/1; 被引[WOS]:14; IF:3.1/3.0评论推荐收藏
 [7] Zhe Cheng.,Fengwen Mu.,Tiangui You.,Wenhui Xu.,Jingjing Shi.,...&Samuel Graham.(2020).Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces.ACS APPLIED MATERIALS & INTERFACES.浏览/下载:380/23; 被引[WOS]:79; IF:8.3/8.7评论推荐收藏
 [8] Yibo Wang.,Wenhui Xu.,Tiangui You.,Fengwen Mu.,Haodong Hu.,...&Yue Hao.(2020).β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY.浏览/下载:232/0; 被引[WOS]:41; IF:6.4/4.9评论推荐收藏
 [9] Wenhui Xu,Yibo Wang,Tiangui You,et al. First Demonstration Of Waferscale Heterogeneous Integration Of Ga2o3 Mosfets On Sic And Si Substrates By Ion-cutting Process[C]. International Electron Devices Meeting (iedm).2019-12-10.浏览/下载:967/0; 被引[WOS]:53评论推荐收藏
 [10] Huang, Kai.,Li, Zhongxu.,Yan, Youquan.,Zhao, Xiaomeng.,Li, Wenqin.,...&Ou, Xin.(2019).Comparative study of the ion-slicing mechanism of Y-cut LiNbO3.AIP ADVANCES,9(8).浏览/下载:377/7; 被引[WOS]:8; IF:1.4/1.4评论推荐收藏