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合作作者[TOP 5]

  • 邹新波

    合作成果数：23

  • 陈嘉祥

    合作成果数：17

  • 张羽

    合作成果数：11

  • 睢金

    合作成果数：10

  • Lu, Xing

    合作成果数：8

访问统计


  总访问量
 934
  访问来源
    内部： 116
    外部： 818
    国内： 827
    国外： 107

  年访问量
 192
  访问来源
    内部： 7
    外部： 185
    国内： 174
    国外： 18

  月访问量
 11
  访问来源
    内部： 1
    外部： 10
    国内： 11
    国外： 0

访问量

访问量

1. Emission and Capture Kinetics of Minority Carrier Trap in GaN Devi.. [932]
2. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [503]
3. Emission and Capture Characteristics of Electron Trap (Eemi = 0.8e.. [417]
4. Relaxation kinetics of interface states and bulk traps in atomic l.. [410]
5. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [396]
6. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [380]
7. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [341]
8. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [326]
9. Suppressed current collapse and improved threshold voltage stabili.. [321]
10. Effect of 5 MeV proton irradiation on electrical and trap characte.. [314]
11. Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With.. [299]
12. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n het.. [291]
13. Emission and capture characteristics of deep hole trap in n-GaN by.. [286]
14. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [253]
15. Acceleration of solving drift-diffusion equations enabled by estim.. [253]
16. Study of Traps in p-GaN Gate HEMT by Optical DLTS [243]
17. Electrical Characterization of Vertical β-Ga2 O3 SBD w/o epi-laye.. [205]
18. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [196]
19. Electrical Characterization of β-Ga2O3 Power Diodes for Cryogenic.. [177]
20. Temperature-Dependent Electrical and Trap Properties of β-Ga2O3 S.. [172]
21. Investigation of interface and bulk traps in ZrO2/β-Ga2O3 metal-o.. [125]
22. Dynamic Characteristics of Neutral Beam Etching Enabled Normally-o.. [73]
23. ZrO2/β-Ga2O3 MOS器件的界面态和体陷阱物性研究 [35]

下载量

1. Relaxation kinetics of interface states and bulk traps in atomic l.. [51]
2. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [10]
3. Effect of 5 MeV proton irradiation on electrical and trap characte.. [4]
4. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [3]
5. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [3]
6. Suppressed current collapse and improved threshold voltage stabili.. [3]
7. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [1]
8. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [1]
9. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [1]
10. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [1]
11. Dynamic Characteristics of Neutral Beam Etching Enabled Normally-o.. [1]