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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：67/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025, 卷号: 13, 页码: 117-127 作者: Zhidong Tang; Zewei Wang; Yumeng Yuan; Chang He; Xin Luo Adobe PDF(10435Kb) \| 收藏 \| 浏览/下载：73/1 \| 提交时间：2025/03/03 Cryogenic equipment - Integrated circuit design - Integrated circuit manufacture - MIS devices - MOSFET devices - Printed circuit design - Static random access storage Circuit designs - CMOS devices - Compact model - Cryogenic circuit design - Cryogenic device physic - Device physics - Monte Carlo's simulation - Process design kit - Temperature dependent - Temperature-dependent compact model
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1629/2 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	A High-Boost Ratio Isolated Current-Fed DC/DC Converter Based on Constant Off Time Control 会议论文 2024 IEEE 10TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2024-ECCE ASIA), Chengdu, China, 17-20 May 2024 作者: Yihan Wu; Mingde Zhou; Haoyu Wang Adobe PDF(2556Kb) \| 收藏 \| 浏览/下载：346/2 \| 提交时间：2024/07/08 Battery Pack Boost converter Electric loads MOSFET devices Solar panels Solar power generation Zero voltage switching Constant off time control Current fed Current-fed converter Dc/dc converters High-boost ratio OFF time Off-time Photovoltaic panels Photovoltaics Time control
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：291/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324 作者: Yijun Qian; Qiang Liu; Jialun Yao; Xiaowei Wang; Amit Kumar Shukla Adobe PDF(4964Kb) \| 收藏 \| 浏览/下载：446/2 \| 提交时间：2023/06/30 High electron mobility transistors III-V semiconductors Leakage currents MOSFET devices Silicon on insulator technology Aging compensation Back bias Biasing techniques Forward back biasing technique Hot carrier degradation MOS-FET MOSFETs Off-state leakage current Performances evaluation Silicon-on-insulator MOSFETs
	Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1 作者: Adobe PDF(2468Kb) \| 收藏 \| 浏览/下载：271/0 \| 提交时间：2022/11/04 Hardening Ionizing radiation MOSFET devices Radiation effects Radiation hardening Radiation shielding Silicon on insulator technology Threshold voltage MOS-FET MOSFETs Radiation hardening (electronic) Radiation hardening (electronics) Radiation immunity Silicon on insulator Total Ionizing Dose Total ionizing dose hardening Void embedded silicon on insulator
	Silicon Phosphorus Process Uniformity Improvement Study in Advanced Node 会议论文 2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022 作者: Huojin Tu; Hui Wang; Li Peng; Jiaqi Hong; Wangxin Nie Adobe PDF(3557Kb) \| 收藏 \| 浏览/下载：259/0 \| 提交时间：2022/09/30 Gases MOSFET devices Phosphorus Si-Ge alloys Silicon compounds Silicon wafers Carrier gas CMOS devices Global uniformity Performance Process uniformity Scaling down Silicon phosphorus Source and drains Source region Wafer uniformity
	Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET 会议论文 2021 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS, ICTA 2021, Zhuhai, China, November 24, 2021 - November 26, 2021 作者: Qian, Yijun; Gao, Yuan; Shukla, Amit Kumar; Wu, Tao; Wei, Xing Adobe PDF(2430Kb) \| 收藏 \| 浏览/下载：392/1 \| 提交时间：2022/07/01 Drain current MOSFET devices Silicon on insulator technology Threshold voltage Condition Gate induced drain leakage currents Gate induced drain leakages Hot carrier injection Injection conditions Interface traps nMOSFETs Silicon on insulator Stress time Tunneling
	Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2021, 卷号: 42, 期号: 10, 页码: 1428-1431 作者: Lantian Zhao; Qiang Liu; Chenhe Liu; Lingli Chen; Yumeng Yang Adobe PDF(1065Kb) \| 收藏 \| 浏览/下载：249/0 \| 提交时间：2021/12/03 Ionizing radiation Metals MOS devices Nanosheets Oxide semiconductors Silicon on insulator technology Substrates Threshold voltage Off state current Radiation environments Radiation tolerances Silicon on insulator substrates Threshold voltage shifts Total Ionizing Dose Total ionizing dose effects X ray irradiation Gallium arsenide Logic gates Silicon-on-insulator MOSFET Total ionizing dose Performance evaluation nanosheet gate-all-around void-embedded silicon on insulator

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