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合作作者[TOP 5]

  • 杨雨梦

    合作成果数：6

  • 吴涛

    合作成果数：4

  • Rajkumar Subramani

    合作成果数：2

  • Amit Kumar Shukla

    合作成果数：2

  • Gao, Yuan

    合作成果数：2
钱益军 博士生
所在学院： 信息科学与技术学院
职务： --
研究方向：
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钱益军

科研成果

7 2359 8 8 0 2
Items Views Downloads TC[WOS] TC[CSCD] H-index
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 [1] Yijun Qian,Yuan Gao,Amit Kumar Shukla,et al. Influence Of Localized Hot Carrier Degradation In Dsoi Device Operating In Mosfet And Bjt Modes[C]. 2024 8th Ieee Electron Devices Technology & Manufacturing Conference (edtm).Institute Of Electrical And Electronics Engineers Inc.2024-03-06.浏览/下载:320/4; 被引[WOS]:0评论推荐收藏
 [2] Liu, Yizhe.,Li, Qinshu.,Qian, Yijun.,Yang, Yumeng.,Wang, Shanmin.,...&Sun, Bo.(2023).Thermal conductivity of high-temperature high-pressure synthesized θ-TaN.APPLIED PHYSICS LETTERS,122(22).浏览/下载:257/0; 被引[WOS]:2; IF:3.5/3.5评论推荐收藏
 [3] 钱益军,杨雨梦. 基于混合栅极结构器件的性能退化补偿方法. 2023-05-23.浏览/下载:425/0评论推荐收藏
 [4] Yijun Qian.,Qiang Liu.,Jialun Yao.,Xiaowei Wang.,Amit Kumar Shukla.,...&Yumeng Yang.(2023).Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,11,319-324.浏览/下载:438/2; 被引[WOS]:0; IF:2.0/2.3评论推荐收藏
 [5] Qian, Yijun.,Gao, Yuan.,Shukla, Amit Kumar.,Sun, Lu.,Zou, Xinbo.,...&Yang, Yumeng.(2022).Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES,69(11).浏览/下载:509/1; 被引[WOS]:6; IF:2.9/2.9评论推荐收藏
 [6] Qian, Yijun,Gao, Yuan,Shukla, Amit Kumar,et al. Modeling Of Hot Carrier Injection On Gate-induced Drain Leakage In Pdsoi Nmosfet[C]. 2021 Ieee International Conference On Integrated Circuits, Technologies And Applications, Icta 2021.Institute Of Electrical And Electronics Engineers Inc.2021-11-01,239-240.浏览/下载:384/1; 被引[WOS]:0评论推荐收藏
 [7] 钱益军. 新型soi Mosfet热载流子效应研究[D]. 上海. 上海科技大学.浏览/下载:26/0评论推荐收藏