Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design
2025
发表期刊IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (IF:2.0[JCR-2023],2.3[5-Year])
ISSN2168-6734
EISSN2168-6734
卷号13页码:117-127
发表状态已发表
DOI10.1109/JEDS.2025.3542589
摘要

This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical analysis is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM and 5-bit flash ADC are designed, and their performance is investigated and optimized based on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design.

关键词Cryogenic equipment - Integrated circuit design - Integrated circuit manufacture - MIS devices - MOSFET devices - Printed circuit design - Static random access storage Circuit designs - CMOS devices - Compact model - Cryogenic circuit design - Cryogenic device physic - Device physics - Monte Carlo's simulation - Process design kit - Temperature dependent - Temperature-dependent compact model
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收录类别EI
语种英语
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20250917953210
EI主题词CMOS integrated circuits
EI分类号1103.1 Data Storage, Equipment and Techniques - 305.5 Cryogenic Equipment and Components - 713 Electronic Circuits - 714.2 Semiconductor Devices and Integrated Circuits - 904 Design - 913.6 Product Development ; Concurrent Engineering
原始文献类型Article in Press
来源库IEEE
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/493494
专题信息科学与技术学院
信息科学与技术学院_PI研究组_寇煦丰组
信息科学与技术学院_硕士生
信息科学与技术学院_博士生
作者单位
1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
2.School of Integrated Circuits, Tsinghua University, Beijing, China
3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
4.Shanghai IC Research and Development Center, Shanghai, China
5.Huali Microelectronics Corporation, Shanghai, China
第一作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Zhidong Tang,Zewei Wang,Yumeng Yuan,et al. Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2025,13:117-127.
APA Zhidong Tang.,Zewei Wang.,Yumeng Yuan.,Chang He.,Xin Luo.,...&Xufeng Kou.(2025).Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,13,117-127.
MLA Zhidong Tang,et al."Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13(2025):117-127.
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