ShanghaiTech University Knowledge Management System
Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design | |
2025 | |
发表期刊 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (IF:2.0[JCR-2023],2.3[5-Year]) |
ISSN | 2168-6734 |
EISSN | 2168-6734 |
卷号 | 13页码:117-127 |
发表状态 | 已发表 |
DOI | 10.1109/JEDS.2025.3542589 |
摘要 | This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature/frequency responses. Meanwhile, comprehensive device statistical analysis is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the process design kit (PDK), the cryogenic 4 Kb SRAM and 5-bit flash ADC are designed, and their performance is investigated and optimized based on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design. |
关键词 | Cryogenic equipment - Integrated circuit design - Integrated circuit manufacture - MIS devices - MOSFET devices - Printed circuit design - Static random access storage Circuit designs - CMOS devices - Compact model - Cryogenic circuit design - Cryogenic device physic - Device physics - Monte Carlo's simulation - Process design kit - Temperature dependent - Temperature-dependent compact model |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
EI入藏号 | 20250917953210 |
EI主题词 | CMOS integrated circuits |
EI分类号 | 1103.1 Data Storage, Equipment and Techniques - 305.5 Cryogenic Equipment and Components - 713 Electronic Circuits - 714.2 Semiconductor Devices and Integrated Circuits - 904 Design - 913.6 Product Development ; Concurrent Engineering |
原始文献类型 | Article in Press |
来源库 | IEEE |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/493494 |
专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_寇煦丰组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 |
作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.School of Integrated Circuits, Tsinghua University, Beijing, China 3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 4.Shanghai IC Research and Development Center, Shanghai, China 5.Huali Microelectronics Corporation, Shanghai, China |
第一作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhidong Tang,Zewei Wang,Yumeng Yuan,et al. Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2025,13:117-127. |
APA | Zhidong Tang.,Zewei Wang.,Yumeng Yuan.,Chang He.,Xin Luo.,...&Xufeng Kou.(2025).Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,13,117-127. |
MLA | Zhidong Tang,et al."Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13(2025):117-127. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。