Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate

doi:10.1109/LED.2021.3107851

	Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate
	Lantian Zhao 1; Qiang Liu 1; Chenhe Liu 1; Lingli Chen 1; Yumeng Yang2 ; Xing Wei 1; Zhiqiang Mu 1; Wenjie Yu 1
	2021-10
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	0741-3106
EISSN	1558-0563
卷号	42 期号:10 页码:1428-1431
发表状态	已发表
DOI	10.1109/LED.2021.3107851
摘要	The total ionizing dose response of nanosheet gate-all-around metal-oxide-semiconductor field effect transistor (NS GAA MOSFET) fabricated on novel void-embedded silicon on insulator (VESOI) substrate was investigated in this work. Strong radiation tolerance with as small as 46.6mV threshold voltage shift and non-discernable increase of off-state current were observed even at a dose of 7Mrad(Si) X-ray irradiation. Both the experiment and simulation results reveal that the radiation tolerance of the MOSFET device can be inherently attributed to the GAA channel. Our work undoubtedly demonstrates that the NS GAA device on VESOI substrate has great potential for radiation-harden applications under heavy radiation environment. © 2021 IEEE.
关键词	Ionizing radiation Metals MOS devices Nanosheets Oxide semiconductors Silicon on insulator technology Substrates Threshold voltage Off state current Radiation environments Radiation tolerances Silicon on insulator substrates Threshold voltage shifts Total Ionizing Dose Total ionizing dose effects X ray irradiation Gallium arsenide Logic gates Silicon-on-insulator MOSFET Total ionizing dose Performance evaluation nanosheet gate-all-around void-embedded silicon on insulator
URL	查看原文
收录类别	EI ; SCIE
语种	英语
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000701249800008
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20213510843213
EI主题词	MOSFET devices
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 933 Solid State Physics
原始文献类型	Journal article (JA)
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/133396
专题	信息科学与技术学院信息科学与技术学院_PI研究组_杨雨梦组
作者单位	1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 2.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Lantian Zhao,Qiang Liu,Chenhe Liu,et al. Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate[J]. IEEE ELECTRON DEVICE LETTERS,2021,42(10):1428-1431.
APA	Lantian Zhao.,Qiang Liu.,Chenhe Liu.,Lingli Chen.,Yumeng Yang.,...&Wenjie Yu.(2021).Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate.IEEE ELECTRON DEVICE LETTERS,42(10),1428-1431.
MLA	Lantian Zhao,et al."Total ionizing dose effects on nanosheet gate-all-around MOSFETs built on void embedded silicon on insulator substrate".IEEE ELECTRON DEVICE LETTERS 42.10(2021):1428-1431.