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| Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET | |
| 2021-11 | |
| 会议录名称 | 2021 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS, ICTA 2021 |
| 页码 | 239-240 |
| 发表状态 | 已发表 |
| DOI | 10.1109/ICTA53157.2021.9661921 |
| 摘要 | In this paper, the gate-induced drain leakage (GIDL) current in partial depleted silicon on insulator nMOSFET was measured under different hot carrier injection conditions. With the increase of stress time, the GIDL current increases steeply under channel hot carrier condition due to the dominant electron injection into oxide and the consequent generation of interface traps. On the other hand, under the drain avalanche hot carrier condition, the additional hole injection partially cancels with the electrons, leading to a mild increase of GIDL current. By taking into account the interface traps induced threshold voltage shift, we further proposed a modified model to fit the experimental data. © 2021 IEEE. |
| 会议录编者/会议主办者 | Beijing Institute of Electronics ; IEEE Nanjing Section AP/MTT/EMC Joint Chapter |
| 关键词 | Drain current MOSFET devices Silicon on insulator technology Threshold voltage Condition Gate induced drain leakage currents Gate induced drain leakages Hot carrier injection Injection conditions Interface traps nMOSFETs Silicon on insulator Stress time Tunneling |
| 会议名称 | 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021 |
| 会议地点 | Zhuhai, China |
| 会议日期 | November 24, 2021 - November 26, 2021 |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20220811683343 |
| EI主题词 | Hot carriers |
| EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits |
| 原始文献类型 | Conference article (CA) |
| 文献类型 | 会议论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/195187 |
| 专题 | 信息科学与技术学院_硕士生 物质科学与技术学院_PI研究组_杨晓瑜组 信息科学与技术学院_PI研究组_吴涛组 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_杨雨梦组 |
| 作者单位 | 1.Shanghai Tech University, Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, School of Information Science and Technology, Shanghai; 201210, China; 2.Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai; 200050, China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Qian, Yijun,Gao, Yuan,Shukla, Amit Kumar,et al. Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET[C]//Beijing Institute of Electronics, IEEE Nanjing Section AP/MTT/EMC Joint Chapter:Institute of Electrical and Electronics Engineers Inc.,2021:239-240. |
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