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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：73/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform for Reliable Cryogenic IC Design 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025, 卷号: 13, 页码: 117-127 作者: Zhidong Tang; Zewei Wang; Yumeng Yuan; Chang He; Xin Luo Adobe PDF(10435Kb) \| 收藏 \| 浏览/下载：82/1 \| 提交时间：2025/03/03 Cryogenic equipment - Integrated circuit design - Integrated circuit manufacture - MIS devices - MOSFET devices - Printed circuit design - Static random access storage Circuit designs - CMOS devices - Compact model - Cryogenic circuit design - Cryogenic device physic - Device physics - Monte Carlo's simulation - Process design kit - Temperature dependent - Temperature-dependent compact model
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1680/2 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	A High-Boost Ratio Isolated Current-Fed DC/DC Converter Based on Constant Off Time Control 会议论文 2024 IEEE 10TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2024-ECCE ASIA), Chengdu, China, 17-20 May 2024 作者: Adobe PDF(2556Kb) \| 收藏 \| 浏览/下载：354/2 \| 提交时间：2024/07/08 Battery Pack Boost converter Electric loads MOSFET devices Solar panels Solar power generation Zero voltage switching Constant off time control Current fed Current-fed converter Dc/dc converters High-boost ratio OFF time Off-time Photovoltaic panels Photovoltaics Time control
	Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes 会议论文 2024 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), Bangalore, India, 3-6 March 2024 作者: Yijun Qian; Yuan Gao; Amit Kumar Shukla; Tao Wu; Zhiqiang Mu Adobe PDF(1028Kb) \| 收藏 \| 浏览/下载：340/4 \| 提交时间：2024/05/17 Hot carrier degradation DSOI MOSFET BJT
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Yu Zhang; Renqiang Zhu Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：302/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector 期刊论文 SENSORS, 2023, 卷号: 23, 期号: 12 作者: Wei, Yingdong; Yao, Chenyu; Han, Li; Zhang, Libo; Chen, Zhiqingzi Adobe PDF(4201Kb) \| 收藏 \| 浏览/下载：392/0 \| 提交时间：2023/07/21 Electrons Field effect transistors III-V semiconductors Plasma oscillations Plasma waves Semiconductor doping Structure (composition) Terahertz waves Hot electron effects Hydrodynamic modeling Microscopic mechanisms Non-resonant plasma oscillation regime Nonlinear rectification Nonresonant Photoresponses Si MOSFET Tera Hertz Terahertz detectors
	Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324 作者: Yijun Qian; Qiang Liu; Jialun Yao; Xiaowei Wang; Amit Kumar Shukla Adobe PDF(4964Kb) \| 收藏 \| 浏览/下载：456/2 \| 提交时间：2023/06/30 High electron mobility transistors III-V semiconductors Leakage currents MOSFET devices Silicon on insulator technology Aging compensation Back bias Biasing techniques Forward back biasing technique Hot carrier degradation MOS-FET MOSFETs Off-state leakage current Performances evaluation Silicon-on-insulator MOSFETs
	Stacked-bridge-based three-level DAB converter in 800V dc micro-grids 会议论文 CONFERENCE PROCEEDINGS - IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION - APEC, Orlando, FL, United states, March 19, 2023 - March 23, 2023 作者: Haoyu Zhang; Liang Wang; Haoyu Wang Adobe PDF(3783Kb) \| 收藏 \| 浏览/下载：276/0 \| 提交时间：2023/07/07 DC-DC converters Electric power supplies to apparatus Energy transfer Power MOSFET Pulse width modulation Secondary batteries Asymmetric pulse-width modulation Bidirectional DC/DC converters Dc micro-grid Dual active bridge converter High-voltage bus High-voltages MOSFETs Pulsewidth modulations (PWM) Zero-voltage switching
	Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1 作者: Liu, Qiang Adobe PDF(2468Kb) \| 收藏 \| 浏览/下载：278/0 \| 提交时间：2022/11/04 Hardening Ionizing radiation MOSFET devices Radiation effects Radiation hardening Radiation shielding Silicon on insulator technology Threshold voltage MOS-FET MOSFETs Radiation hardening (electronic) Radiation hardening (electronics) Radiation immunity Silicon on insulator Total Ionizing Dose Total ionizing dose hardening Void embedded silicon on insulator

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