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合作作者[TOP 5]

  • 邹新波

    合作成果数：25

  • 屈昊岚

    合作成果数：17

  • Lu, Xing

    合作成果数：10

  • 睢金

    合作成果数：9

  • 张羽

    合作成果数：8

访问统计


  总访问量
 917
  访问来源
    内部： 15
    外部： 902
    国内： 751
    国外： 166

  年访问量
 172
  访问来源
    内部： 0
    外部： 172
    国内： 152
    国外： 20

  月访问量
 10
  访问来源
    内部： 0
    外部： 10
    国内： 6
    国外： 4

访问量

访问量

1. Emission and Capture Kinetics of Minority Carrier Trap in GaN Devi.. [944]
2. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [514]
3. Trap Characterization Techniques for GaN-Based HEMTs: A Critical R.. [469]
4. Emission and Capture Characteristics of Electron Trap (Eemi = 0.8e.. [432]
5. Relaxation kinetics of interface states and bulk traps in atomic l.. [428]
6. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [413]
7. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [403]
8. Temperature-dependent electrical characteristics of neutron-irradi.. [379]
9. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [360]
10. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [358]
11. High-speed Ge-on-GaAs photodetector [347]
12. Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes .. [342]
13. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [337]
14. Electrical characterization of GaN Schottky barrier diode at cryog.. [335]
15. Effect of 5 MeV proton irradiation on electrical and trap characte.. [331]
16. Emission and capture characteristics of deep hole trap in n-GaN by.. [301]
17. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n het.. [298]
18. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [259]
19. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [257]
20. Study of Traps in p-GaN Gate HEMT by Optical DLTS [252]
21. Radiation effects of high-fluence reactor neutron on Ni/β-Ga [241]
22. Electrical Characterization of Vertical β-Ga2 O3 SBD w/o epi-laye.. [214]
23. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [206]
24. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [202]
25. Electrical Characterization of β-Ga2O3 Power Diodes for Cryogenic.. [187]
26. Temperature-Dependent Electrical and Trap Properties of β-Ga2O3 S.. [187]
27. Investigation of interface and bulk traps in ZrO2/β-Ga2O3 metal-o.. [135]

下载量

1. Relaxation kinetics of interface states and bulk traps in atomic l.. [56]
2. Radiation effects of high-fluence reactor neutron on Ni/β-Ga [39]
3. Temperature-dependent electrical characteristics of neutron-irradi.. [11]
4. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [10]
5. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [5]
6. Reliable electrical performance of β-Ga2O3 Schottky barrier diode.. [4]
7. Effect of 5 MeV proton irradiation on electrical and trap characte.. [4]
8. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [3]
9. High-speed Ge-on-GaAs photodetector [2]
10. Trap Characterization Techniques for GaN-Based HEMTs: A Critical R.. [2]
11. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [2]
12. Electrical characterization of GaN Schottky barrier diode at cryog.. [1]
13. Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep.. [1]
14. Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown.. [1]
15. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [1]
16. Neutron Irradiation Induced Carrier Removal and Deep-Level Traps i.. [1]
17. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [1]