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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：67/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Dopant-mediated carrier tunneling in short-channel two-dimensional transistors 期刊论文 MATERIALS CHEMISTRY FRONTIERS, 2024, 卷号: 8, 期号: 20, 页码: 3300-3307 作者: Lu, Yue; Li, Chenyu; Yang, Shenbo; Yuan, Mingxuan; Qiao, Shuo Adobe PDF(3777Kb) \| 收藏 \| 浏览/下载：224/4 \| 提交时间：2024/08/26 Heterojunctions Layered semiconductors MOS devices Quantum electronics Short circuit currents Silicon wafers Surface discharges Transistors Carrier tunnelling Density-functional theory calculations Dopant atoms MoS 2 Node technology Quantum transport simulations Short channels Silicon-based electronics Two-dimensional Two-dimensional semiconductors
	Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Nonuniform Hot Phonon Bottleneck Effect in Monolayer MoS2 期刊论文 NANO LETTERS, 2024, 卷号: 24, 期号: 30, 页码: 9269-9275 作者: Wei, Xiaofan; Wang, Zihan; Wang, Ziyu; Lu, Yue Adobe PDF(4023Kb) \| 收藏 \| 浏览/下载：391/18 \| 提交时间：2024/08/09 Diffusion Entropy Expansion Gaussian beams Hot carriers Laser beams Layered semiconductors Molybdenum compounds Optoelectronic devices Phonons Pumping (laser) Sulfur compounds Transition metals Bottleneck effects Carrier cooling Hot phonon bottleneck effect Hot phonons Hot-carriers Monolayer MoS2 Negative diffusion Phonon bottleneck Spatiotemporal hot carrier cooling dynamic Transient absorption Transient absorption microscopy
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1623/2 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	Demonstration of acousto-optical modulation based on a thin-film AlScN photonic platform 期刊论文 PHOTONICS RESEARCH, 2024, 卷号: 12, 期号: 6, 页码: 1138-1149 作者: Bian, Kewei; Li, Zhenyu; Liu, Yushuai; Xu, Sumei; Zhao, Xingyan Adobe PDF(2215Kb) \| 收藏 \| 浏览/下载：337/3 \| 提交时间：2024/06/21 Acoustic waves Aluminum nitride CMOS integrated circuits Light modulation MOS devices Optical signal processing Oxide semiconductors Scandium Scandium compounds Thick films Thin film circuits Acousto-optic modulations Acousto-optic modulator Complementary metal-oxide-semiconductor technologies Fabrication process Microwave signal processing Modulation technologies On chips Optical signal-processing Piezoelectric property Thin-films
	Ultra-compact and high-performance suspended aluminum scandium nitride Lamb wave humidity sensor with a graphene oxide layer 期刊论文 NANOSCALE, 2024, 卷号: 16, 期号: 21, 页码: 10230-10238 作者: Luo, Zhifang; Li, Dongxiao; Le, Xianhao Adobe PDF(2961Kb) \| 收藏 \| 浏览/下载：324/4 \| 提交时间：2024/05/11 Acoustic surface wave devices Acoustic waves Aluminum nitride Electromechanical devices Graphene III-V semiconductors MEMS MOS devices Nitrides Oxide semiconductors 'current Aluminium-scandium Complementary metal oxide semiconductor process Graphene oxides Low sensitivity Microelectromechanical-systems technologies Oxide layer Performance Sensing areas Sensor limits
	Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 135, 期号: 8 作者: Chen, Jiaxiang; Qu, Haolan Adobe PDF(3256Kb) \| 收藏 \| 浏览/下载：401/47 \| 提交时间：2024/03/22 Atomic layer deposition Capacitance Electric fields Gallium compounds MOS capacitors Oxide semiconductors Transistors Zirconia Atomic layer deposited Bulk traps Comprehensive analysis Device instabilities Emission behavior Forward bias Interfaces state Metal-oxide semiconductor devices Metal-oxide- semiconductorcapacitors Relaxation kinetics
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：290/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, 2024, 卷号: 71, 期号: 1, 页码: 348-358 作者: Peng, Xiaoxuan; Ge, Xiaohu; Ha, Yajun Adobe PDF(1654Kb) \| 收藏 \| 浏览/下载：293/1 \| 提交时间：2024/04/12 Circuit simulation CMOS integrated circuits Computer circuits Digital communication systems Digital integrated circuits Energy utilization Field effect transistors Logic circuits Logic gates MOS devices Optimization Oxide semiconductors Signal encoding Single electron transistors Stochastic models Stochastic systems Thermodynamics Timing circuits Energy consumption model Energy consumption optimization Energy-consumption Integrated circuit modeling Parity check Parity check circuit Parity check codes Single-electron transistors Stochastic thermodynamics XOR gates
	Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324 作者: Yijun Qian; Qiang Liu; Jialun Yao; Xiaowei Wang; Amit Kumar Shukla Adobe PDF(4964Kb) \| 收藏 \| 浏览/下载：446/2 \| 提交时间：2023/06/30 High electron mobility transistors III-V semiconductors Leakage currents MOSFET devices Silicon on insulator technology Aging compensation Back bias Biasing techniques Forward back biasing technique Hot carrier degradation MOS-FET MOSFETs Off-state leakage current Performances evaluation Silicon-on-insulator MOSFETs

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