Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics
2024
发表期刊IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS (IF:5.2[JCR-2023],4.5[5-Year])
ISSN1549-8328
EISSN1558-0806
卷号71期号:1页码:348-358
发表状态已发表
DOI10.1109/TCSI.2023.3331833
摘要

To reduce the energy consumption of digital communication systems, chips based on the complementary metal-oxide-semiconductor (CMOS) technology are facing the challenge of low energy consumption for signal processing in communication systems. Some typical technologies, such as shortening the transistor size, reducing the number of electrons and lowering the supply voltage are widely used by present chips to achieve low energy consumption. However, as the gate size of transistors is getting closer to the mesoscopic scale, how to model and analyze the non-equilibrium information processing of transistors is an essential challenge for digital integrated circuits. In this paper, based on the stochastic thermodynamics theory, an energy consumption model of a single electron transistor XOR gate considering the input state transition is proposed. Moreover, the Landauer limit and mismatch theory are combined to derive the lower bound of the energy consumption of XOR gate for one operation. Simulation results show that the average energy consumption of XOR gate is the lowest when the supply voltage is five times the thermal noise voltage. Based on the proposed energy consumption model of XOR gate, an energy consumption model of parity check circuits is proposed. Then an optimization algorithm is designed to reduce the energy consumption of parity check circuits. Compared with the energy consumption of parity check circuits without optimization, simulation results show that the energy consumption of parity check circuits using the energy consumption optimization algorithm is maximumly reduced by 41.71%. © 2004-2012 IEEE.

关键词Circuit simulation CMOS integrated circuits Computer circuits Digital communication systems Digital integrated circuits Energy utilization Field effect transistors Logic circuits Logic gates MOS devices Optimization Oxide semiconductors Signal encoding Single electron transistors Stochastic models Stochastic systems Thermodynamics Timing circuits Energy consumption model Energy consumption optimization Energy-consumption Integrated circuit modeling Parity check Parity check circuit Parity check codes Single-electron transistors Stochastic thermodynamics XOR gates
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收录类别EI
语种英语
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20234915181894
EI主题词Random processes
EI分类号525.3 Energy Utilization ; 641.1 Thermodynamics ; 703.1.1 Electric Network Analysis ; 712.1 Semiconducting Materials ; 713.4 Pulse Circuits ; 714.2 Semiconductor Devices and Integrated Circuits ; 716.1 Information Theory and Signal Processing ; 721.2 Logic Elements ; 721.3 Computer Circuits ; 731.1 Control Systems ; 921.5 Optimization Techniques ; 922.1 Probability Theory ; 961 Systems Science
原始文献类型Journal article (JA)
来源库IEEE
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/359898
专题信息科学与技术学院
信息科学与技术学院_PI研究组_哈亚军组
通讯作者Ge, Xiaohu
作者单位
1.Huazhong University of Science and Technology, School of Electronic Information and Communications, Wuhan; 430074, China;
2.International Joint Research Center of Green Communications and Networking, Wuhan; 430074, China;
3.ShanghaiTech University, School of Information Science and Technology, Shanghai; 201210, China;
4.Shanghai Engineering Research Center of Energy Efficient and Custom Ai Ic, Shanghai; 201210, China
推荐引用方式
GB/T 7714
Peng, Xiaoxuan,Ge, Xiaohu,Ha, Yajun. Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS,2024,71(1):348-358.
APA Peng, Xiaoxuan,Ge, Xiaohu,&Ha, Yajun.(2024).Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS,71(1),348-358.
MLA Peng, Xiaoxuan,et al."Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS 71.1(2024):348-358.
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