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合作作者[TOP 5]

  • 邹新波

    合作成果数：9

  • 郭好文

    合作成果数：7

  • 顾怡恬

    合作成果数：5

  • 张羽

    合作成果数：4

  • 高涵

    合作成果数：3

访问统计


  总访问量
 731
  访问来源
    内部： 22
    外部： 709
    国内： 641
    国外： 90

  年访问量
 141
  访问来源
    内部： 0
    外部： 141
    国内： 131
    国外： 10

  月访问量
 1
  访问来源
    内部： 0
    外部： 1
    国内： 1
    国外： 0

访问量

访问量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1051]
2. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [373]
3. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [368]
4. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n het.. [284]
5. Demonstration and modeling of frequency tripler based on GaN Schot.. [278]
6. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [243]
7. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [241]
8. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [72]
9. 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutraliz.. [22]

下载量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [478]
2. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [4]
3. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [2]
4. GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Visio.. [2]
5. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [1]
6. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [1]