Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy

doi:10.1088/1361-6641/acf608

	Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy
	Qu, Haolan1,2,3 ; Chen, Jiaxiang1,2,3 ; Zhang, Yu1,2,3 ; Sui, Jin1,2,3 ; Zhang, Ruohan1,4 ; Zhou, Junmin1,2,3 ; Lu, Xing 5; Zou, Xinbo1,4
	2023
发表期刊	SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IF:1.9[JCR-2023],1.9[5-Year])
ISSN	0268-1242
EISSN	1361-6641
卷号	38 期号:10 页码:105010
发表状态	已发表
DOI	10.1088/1361-6641/acf608
摘要	The properties of a minority carrier (hole) trap in ss-Ga2O3 have been explicitly investigated using a NiO/ss-Ga2O3 p-n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E-emi) and the hole capture cross section (sigma(p)) were derived to be 0.10 eV and 2.48 x 10(-15) cm(2), respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (Tau(c)) and emission time constant (Tau(e)). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N-Ta) of 2.73 x 10(15) cm(-3) was extracted, together with an electron capture cross section (sigma(n)) of 1.42 x 10(-18) cm(2). This study provides a foundation for the comprehension of trap properties in ss-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type ss-Ga2O3 materials and performance enhancement of ss-Ga2O3-based power devices.
关键词	NiO/beta-Ga2O3 p-n heterojunction deep-level transient spectroscopy minority carrier trap time constant trap concentration
URL	查看原文
收录类别	SCI ; SCIE ; EI ; SCOPUS
语种	英语
资助项目	ShanghaiTech University Startup Fund[2017F0203-000-14] ; National Natural Science Foundation of China[52131303] ; Natural Science Foundation of Shanghai[22ZR1442300] ; CAS Strategic Science and Technology Program[XDA18000000]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:001065478200001
出版者	IOP Publishing Ltd
EI入藏号	20234014828782
EI主题词	Gallium compounds
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/329051
专题	信息科学与技术学院_博士生信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_本科生
通讯作者	Zou, Xinbo
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Sch Microelect, Beifing 100029, Peoples R China 4.Shanghai Engn Res Ctr Energy Efficient & Custom AI, Shanghai 200031, Peoples R China 5.Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Qu, Haolan,Chen, Jiaxiang,Zhang, Yu,et al. Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2023,38(10):105010.
APA	Qu, Haolan.,Chen, Jiaxiang.,Zhang, Yu.,Sui, Jin.,Zhang, Ruohan.,...&Zou, Xinbo.(2023).Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,38(10),105010.
MLA	Qu, Haolan,et al."Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 38.10(2023):105010.