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成果统计

合作作者[TOP 5]

  • Huang, Jun

    合作成果数：4

  • 李迪迪

    合作成果数：3

  • 陈晶晶

    合作成果数：3

  • 夏嵩渊

    合作成果数：3

  • Wang, Jianfeng

    合作成果数：3

访问统计


  总访问量
 9891
  访问来源
    内部： 9
    外部： 9882
    国内： 2882
    国外： 7009

  年访问量
 201
  访问来源
    内部： 2
    外部： 199
    国内： 147
    国外： 54

  月访问量
 7
  访问来源
    内部： 0
    外部： 7
    国内： 4
    国外： 3

访问量

访问量

1. Effects of 6H-SiC substrate polarity on the morphology and microst.. [465]
2. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluo.. [447]
3. HVPE growth of bulk GaN with high conductivity for vertical device.. [421]
4. Influence comparison of N(2)and NH(3)nitrogen sources on AlN films.. [353]
5. Atomic-resolved structural and electric field analysis of the pass.. [333]
6. Influence of sapphire substrate miscut on the surface morphology a.. [320]
7. Preparation of AlN film grown on sputter-deposited and annealed Al.. [269]
8. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-do.. [88]
9. Ta-based Au-free and low annealing temperature ohmic contacts on G.. [54]

下载量

1. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-do.. [7]
2. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluo.. [6]
3. HVPE growth of bulk GaN with high conductivity for vertical device.. [6]
4. Influence comparison of N(2)and NH(3)nitrogen sources on AlN films.. [4]
5. Preparation of AlN film grown on sputter-deposited and annealed Al.. [4]
6. Ta-based Au-free and low annealing temperature ohmic contacts on G.. [3]
7. Effects of 6H-SiC substrate polarity on the morphology and microst.. [1]