High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

doi:10.1063/1.5100251

	High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
	Liu, Zirui1,2,3,4 ; Wang, Jianfeng 1,5; Gu, Hong 1; Zhang, Yumin 1,5,6; Wang, Weifan 1,6; Xiong, Rui 1,6; Xu, Ke1,2,5
	2019-05
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
卷号	9 期号:5
发表状态	已发表
DOI	10.1063/1.5100251
摘要	This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and significantly reduced the reverse leakage current by 105 times. These results indicate that the F-implanted SBD showed improved reverse capability. In addition, a high I-on/I-off ratio of 10(8) and high Schottky barrier height of 0.92 eV were also achieved for this diode with F implantation. The influence of F ion implantation in this SBD was also discussed in detail. It was found that F ion implantation to GaN could not only create a high-resistant region as effective edge termination but be employed for adjusting the carrier density of the surface of GaN, which were both helpful to achieve high breakdown voltage and suppress reverse leakage current. This work shows the potential for fabricating high-voltage and low-leakage SBDs using F ion implantation treatment. (c)) 2019 Author(s).
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	National Key R&D Program of China[2017YFB0404100]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000477701000017
出版者	AMER INST PHYSICS
EI入藏号	20192106970430
EI主题词	Diodes ; Electric breakdown ; Fluorine ; III-V semiconductors ; Ion implantation ; Ions ; Schottky barrier diodes
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/57605
专题	物质科学与技术学院_硕士生物质科学与技术学院_特聘教授组_徐科组
通讯作者	Wang, Jianfeng; Xu, Ke
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 5.Suzhou Nanowin Sci & Technol Co Ltd, Suzhou 215123, Peoples R China 6.Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Liu, Zirui,Wang, Jianfeng,Gu, Hong,et al. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment[J]. AIP ADVANCES,2019,9(5).
APA	Liu, Zirui.,Wang, Jianfeng.,Gu, Hong.,Zhang, Yumin.,Wang, Weifan.,...&Xu, Ke.(2019).High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment.AIP ADVANCES,9(5).
MLA	Liu, Zirui,et al."High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment".AIP ADVANCES 9.5(2019).