Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs

doi:10.1063/5.0087659

	Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs
	Zhang, Jiahui1,2 ; Su, Xujun 1; Cai, Yutao 3; Li, Didi1,2 ; Wang, Luhua 1; Chen, Jingjing 1; Zeng, Xionghui 1; Wang, Jianfeng 1; Xu, Ke1,2,4
	2022-04-01
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
EISSN	2158-3226
卷号	12 期号:4
发表状态	已发表
DOI	10.1063/5.0087659
摘要	The passivation interfaces of GaN-based MIS-HEMTs with Si3N4 and ZrO2/Si3N4 bilayers were investigated through atomic resolution scanning transmission electron microscope-energy dispersive spectroscopy-differential phase contrast microscopy methods. It is found that the Si3N4/GaN interface exhibits atomic disorder fluctuation, and the GaN surface is discontinuous at the depth of 1-2 atomic layers. An oxide layer of & SIM;2 nm is formed at the ZrO2/GaN interface, and the GaN surface is atomically flat. Furthermore, the local minimum of the potential is located at the Si3N4/GaN interface, while it is distributed in the GaN side at the ZrO2/GaN interface. The electric field or potential distribution is affected by the crystal orientation of the polycrystalline ZrO2 layer. Finally, the difference in passivation mechanism is discussed.& nbsp;(C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).
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收录类别	SCI ; EI ; SCIE
语种	英语
资助项目	National Key R&D Program of China[2017YFB0404100] ; National Natural Science Foundation of China[62104247,62104245] ; 2020 Key R&D Program-Industry Foresight of Jiangsu Province[BE2020004-1] ; Key Core Technologies of Jiangsu Province[BE2020004-1]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000789703100004
出版者	AIP Publishing
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/176094
专题	物质科学与技术学院_硕士生物质科学与技术学院_特聘教授组_徐科组物质科学与技术学院_博士生
通讯作者	Su, Xujun; Xu, Ke
作者单位	1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Ruoshui Rd 398,Suzhou Ind Pk, Suzhou 215123, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Middle Huaxia Rd 393, Shanghai 201210, Peoples R China 3.Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou 215123, Peoples R China 4.Jiangsu Inst Adv Semicond, Shenyang Natl Lab Mat Sci, Jinji Lake Ave 99,Suzhou Ind Pk, Suzhou 215000, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Jiahui,Su, Xujun,Cai, Yutao,et al. Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs[J]. AIP ADVANCES,2022,12(4).
APA	Zhang, Jiahui.,Su, Xujun.,Cai, Yutao.,Li, Didi.,Wang, Luhua.,...&Xu, Ke.(2022).Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs.AIP ADVANCES,12(4).
MLA	Zhang, Jiahui,et al."Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs".AIP ADVANCES 12.4(2022).