Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures

doi:10.1016/j.matlet.2025.138473

	Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures
	Xia Songyuan(夏嵩渊)1,2 ; Zhang Yumin(张育民)1,3; Sun Yuanhang(孙远航)1; Zhu Qizhi(朱启志)1; Liu Wei(刘伟)1; Wang Jianfeng(王建峰)1,3; Xu Ke(徐科)1,2,3
	2025-07-15
发表期刊	MATERIALS LETTERS (IF:2.7[JCR-2023],2.7[5-Year])
ISSN	0167-577X
EISSN	1873-4979
卷号	391
发表状态	已发表
DOI	10.1016/j.matlet.2025.138473
摘要	Ta-based ohmic contacts on GaN and AlGaN/GaN heterostructures were investigated. The main advantage of the Ta-based ohmic contacts is the low annealing temperature, with the optimal range identified as 550---600 degrees C. Notably, the root-mean-square roughness of Ta-based contacts is 8.0 nm, far less than the 22.4 nm in Ti-based contacts. Additionally, the transport properties were also investigated through temperature-dependent I-V measurements, where field emission is the predominant mechanism on GaN while thermionic filed emission play a major role on AlGaN/GaN.
关键词	GaN Ohmic contact Ta Low temperature
URL	查看原文
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	National Key R & D Program of China["2022YFB3605402","2022YFB3604301","2022YFB3605200"] ; National Natural Science Foundation of China[12274360] ; Key R & D Program of Jiangsu Province[BE2023007]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001464427900001
出版者	ELSEVIER
EI入藏号	20251418180191
EI主题词	Aluminum gallium nitride
EI分类号	712.1.2 Compound Semiconducting Materials ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/503675
专题	物质科学与技术学院_博士生物质科学与技术学院_特聘教授组_徐科组
通讯作者	Zhang Yumin(张育民); Xu Ke(徐科)
作者单位	1.Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, People’ s Republic of China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People’ s Republic of China 3.Suzhou Nanowin Science and Technology Co., Ltd., Suzhou, People’s Republic of China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Xia Songyuan,Zhang Yumin,Sun Yuanhang,et al. Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures[J]. MATERIALS LETTERS,2025,391.
APA	Xia Songyuan.,Zhang Yumin.,Sun Yuanhang.,Zhu Qizhi.,Liu Wei.,...&Xu Ke.(2025).Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures.MATERIALS LETTERS,391.
MLA	Xia Songyuan,et al."Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures".MATERIALS LETTERS 391(2025).