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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:73/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
A novel Li-ion based transistor within LiCoO2/Li6.75La3Zr1.5Ta0.5O12/Ag scheme
期刊论文
PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 194-200
作者:
Yin, Jixiang
;
Song, Houning
;
Li, Peirong
;
Xing, Yuzhi
;
Chen, Supeng
Adobe PDF(1445Kb)
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浏览/下载:57/1
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提交时间:2025/01/10
Atomic emission spectroscopy
Field effect transistors
Silver compounds
Tantalum compounds
X ray absorption spectroscopy
Channel layers
Electronics devices
Ion-transport
Ionics devices
LiCoO 2
Physical limits
Resistive state
Solid state batteries
Tunneling effects
X-ray spectroscopy
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者:
Wenbo Ye
;
Junmin Zhou
;
Han Gao
;
Haowen Guo
;
Yitian Gu
Adobe PDF(1674Kb)
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浏览/下载:75/4
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提交时间:2025/02/12
Distributed feedback lasers
Gates (transistor)
High electron mobility transistors
Junction gate field effect transistors
Leakage currents
Monolithic microwave integrated circuits
Noise figure
Enhancement-mode
Gallium nitride
High electron-mobility transistors
Low noiseamplifier
Low-noise amplifier
Metala sem-iconductor high-electron-mobility transistor (MOSHEMT)
MOSHEMT
MOSHEMTs
Neutral beam etching
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
;
Ouyang, Keqing
;
Zou, Xinbo
;
Ma, Hongping
Adobe PDF(2565Kb)
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浏览/下载:261/1
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提交时间:2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
DEFECTS-RICH Ru NANOPLATE DRIVED HIGHLY DISPERSED Pt ATOMS TO BOOST HYDROGEN EVOLUTION REACTION
期刊论文
TAIYANGNENG XUEBAO/ACTA ENERGIAE SOLARIS SINICA, 2024, 卷号: 45, 期号: 9, 页码: 14-19
作者:
Wang, Qiansen
;
Cheng, Qingqing
;
Li, Jun
;
Yang, Hui
Adobe PDF(2351Kb)
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浏览/下载:205/2
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提交时间:2024/10/25
Electron resonance
High resolution transmission electron microscopy
Hydrogen evolution reaction
Paramagnetic resonance
Platinum
Ruthenium
Single electron transistors
Atom utilization
Deposition methods
Electroless
Hydrogen evolution reactions
Nanoplates
Platinum atoms
Ru nanoparticles
Single electron
State of the art
Utilization efficiency
Dopant-mediated carrier tunneling in short-channel two-dimensional transistors
期刊论文
MATERIALS CHEMISTRY FRONTIERS, 2024, 卷号: 8, 期号: 20, 页码: 3300-3307
作者:
Lu, Yue
;
Li, Chenyu
;
Yang, Shenbo
;
Yuan, Mingxuan
;
Qiao, Shuo
Adobe PDF(3777Kb)
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浏览/下载:232/4
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提交时间:2024/08/26
Heterojunctions
Layered semiconductors
MOS devices
Quantum electronics
Short circuit currents
Silicon wafers
Surface discharges
Transistors
Carrier tunnelling
Density-functional theory calculations
Dopant atoms
MoS 2
Node technology
Quantum transport simulations
Short channels
Silicon-based electronics
Two-dimensional
Two-dimensional semiconductors
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping
期刊论文
JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25
作者:
Wang, Qian
;
Hua, Hao
;
Zheng, Li
;
Feng, Junhong
;
Zhang, Cheng
Adobe PDF(2608Kb)
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浏览/下载:1681/2
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提交时间:2024/04/12
Hafnium compounds
Junction gate field effect transistors
MOSFET devices
Silicon
4h-SiC
4H-SiC MOSFET
BFOM
Conventional MOSFETs
High frequency HF
High-frequency figure of merit
Ions implantation
Measured results
MOS structure
RG-MOS
Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175
作者:
Wang, Kaichu
;
Ding, Qingfeng
;
Zhou, Qi
;
Cai, Xinhang
;
Zhang, Jinfeng
收藏
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浏览/下载:250/0
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提交时间:2024/09/20
Aluminum gallium nitride
Beam forming networks
Channel estimation
Chemical lasers
Computer testing
Direction of arrival
Distributed feedback lasers
Dye lasers
Frequency estimation
Gallium nitride
Heterodyne detection
Heterodyning
Heterojunctions
High electron mobility transistors
Hydrogen masers
Laser accessories
Laser theory
Liquid lasers
Radiometers
Temperature sensors
Terahertz wave detectors
Tetrodes
Time difference of arrival
AlGaN/GaN high electron mobility transistors
Arrayed detector
Coherent detection
Directionof-arrival (DOA)
Estimation of direction of arrival terahertz wave
Field of views
Heterodyne (coherent) detection
Linear-array
Tera Hertz
Vector detection
Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy
会议论文
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024
作者:
Ke Li
;
Yi Ma
;
Xinbo Zou
JPEG(176Kb)
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浏览/下载:158/0
|
提交时间:2024/09/19
High electron mobility transistors
III-V semiconductors
Junction gate field effect transistors
Masers
Power amplifiers
Power HEMT
System-on-chip
AM-AM distortion
AM-PM
Compensation strategy
Gain compression
GaN power amplifier
Output power
Power
Power amplifier
Soft gain compression
Transistor architecture
Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells
期刊论文
NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 5
作者:
Jiang, Xianyuan
;
Zhou, Qilin
;
Lu, Yue
;
Liang, Hao
;
Li, Wenzhuo
Adobe PDF(4855Kb)
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浏览/下载:555/120
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提交时间:2024/04/26
Efficiency
Energy gap
Extraction
Field effect transistors
Heterojunctions
Metal halides
Molecules
Open circuit voltage
Optoelectronic devices
Perovskite solar cells
Semiconductor doping
Wide band gap semiconductors
Carrier extraction
Field-effect transistor
Halide perovskites
High quality
Low dimensional
Optoelectronics devices
Perovskite films
Surface layers
Tandem solar cells
Wide-band-gap
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