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Modulation of GeSe and As
2
Se
3
motifs to optimise GeAsSe OTS performance and its mechanism
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2024, 卷号: 13, 期号: 2
作者:
Li, Yukun
;
Wang, Haotian
;
Shao, Mingyue
;
Wang, Yuhao
;
Song, Sannian
Adobe PDF(2838Kb)
|
收藏
|
浏览/下载:203/3
|
提交时间:2024/11/27
Germanium compounds
Leakage (fluid)
Liquid crystals
Nanocrystals
Selenium compounds
Supersaturation
'current
Cross-point array
Optimisations
Performance
Performance metrices
Property
Storage systems
Switching performance
Threshold switching
Volatile storage
Precise and Tunable TΩ Pseudo-Resistors Based on Process-Independent pA-level Current Sources and DACs
会议论文
2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), Singapore, Singapore, 19-22 May 2024
作者:
Jiahe Li
;
Ruoyu Chu
;
Ziqi Li
;
Hongming Lyu
收藏
|
浏览/下载:287/4
|
提交时间:2024/07/08
CMOS integrated circuits
Feedback amplifiers
Integrated circuit design
Leakage currents
Mirrors
Resistors
Timing circuits
Tuning
Bio-signal amplifier
Capacitively coupled
CMOS
Current mirrors
Instrumentation amplifier
Pa current mirror DAC
Process dependency
Sub-threshold circuits
Tunable pseudo-resistor
Tunables
Exploiting the Correlation between 1/f Noise-Dark Current in PIN InGaAs Photodetectors
期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2024, 卷号: PP, 期号: 99, 页码: 1-1
作者:
Chuang Li
;
Hezhuang Liu
;
Jingyi Wang
;
Daqian Guo
;
Baile Chen
Adobe PDF(8412Kb)
|
收藏
|
浏览/下载:188/5
|
提交时间:2024/04/09
InGaAs photodetector
Dark current
1/f noise
sidewall leakage current
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324
作者:
Yijun Qian
;
Qiang Liu
;
Jialun Yao
;
Xiaowei Wang
;
Amit Kumar Shukla
Adobe PDF(4964Kb)
|
收藏
|
浏览/下载:449/2
|
提交时间:2023/06/30
High electron mobility transistors
III-V semiconductors
Leakage currents
MOSFET devices
Silicon on insulator technology
Aging compensation
Back bias
Biasing techniques
Forward back biasing technique
Hot carrier degradation
MOS-FET
MOSFETs
Off-state leakage current
Performances evaluation
Silicon-on-insulator MOSFETs
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 卷号: 69, 期号: 11
作者:
Qian, Yijun
;
Gao, Yuan
;
Shukla, Amit Kumar
;
Sun, Lu
;
Zou, Xinbo
Adobe PDF(3370Kb)
|
收藏
|
浏览/下载:521/1
|
提交时间:2022/10/08
Stress
Logic gates
MOSFET
Electron traps
Degradation
Hot carriers
Market research
Gate-induced drain leakage (GIDL) current
hot carrier stress (HCS)
parasitic bipolar transistor (PBT)
Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes
期刊论文
MICROMACHINES, 2022, 卷号: 13, 期号: 10
作者:
Nie, Ran
;
Shao, Shuai
;
Luo, Zhifang
;
Kang, Xiaoxu
;
Wu, Tao
Adobe PDF(1091Kb)
|
收藏
|
浏览/下载:404/1
|
提交时间:2022/11/08
AlScN
ferroelectric
thin film
leakage current
PUND test
Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET
会议论文
2021 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS, ICTA 2021, Zhuhai, China, November 24, 2021 - November 26, 2021
作者:
Qian, Yijun
;
Gao, Yuan
;
Shukla, Amit Kumar
;
Wu, Tao
;
Wei, Xing
Adobe PDF(2430Kb)
|
收藏
|
浏览/下载:396/1
|
提交时间:2022/07/01
Drain current
MOSFET devices
Silicon on insulator technology
Threshold voltage
Condition
Gate induced drain leakage currents
Gate induced drain leakages
Hot carrier injection
Injection conditions
Interface traps
nMOSFETs
Silicon on insulator
Stress time
Tunneling
Film Stress Influence on Nb/Al-AlOx/Nb Josephson Junctions
期刊论文
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2019, 卷号: 29, 期号: 5
作者:
Wu, Yu
;
Ying, Liliang
;
Li, Guanqun
;
Zhang, Xue
;
Peng, Wei
Adobe PDF(1586Kb)
|
收藏
|
浏览/下载:618/11
|
提交时间:2019/05/08
Film stress
roughness
Josephson junctions
leakage current
junction size
Stress
Niobium compounds
Superconducting thin films
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