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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：91/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：79/4 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	A novel Li-ion based transistor within LiCoO2/Li6.75La3Zr1.5Ta0.5O12/Ag scheme 期刊论文 PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 194-200 作者: Yin, Jixiang; Song, Houning; Li, Peirong; Xing, Yuzhi; Chen, Supeng Adobe PDF(1445Kb) \| 收藏 \| 浏览/下载：61/1 \| 提交时间：2025/01/10 Atomic emission spectroscopy Field effect transistors Silver compounds Tantalum compounds X ray absorption spectroscopy Channel layers Electronics devices Ion-transport Ionics devices LiCoO 2 Physical limits Resistive state Solid state batteries Tunneling effects X-ray spectroscopy
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：276/2 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1775/4 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories 期刊论文 NANO LETTERS, 2024, 卷号: 24, 期号: 15, 页码: 4498-4504 作者: Qiao, Shuo; Qiu, Yuanyuan; Lu, Yue; Wang, Zihan; Yuan, Mingxuan Adobe PDF(5145Kb) \| 收藏 \| 浏览/下载：315/8 \| 提交时间：2024/04/23 Charge trapping Field effect transistors Molybdenum disulfide 2d material Charge-trapping Device application Nanoscrolls One-dimensional Optoelectronics property Rolling process Rolling up Solvent evaporation Two-dimensional
	Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells 期刊论文 NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 5 作者: Jiang, Xianyuan; Zhou, Qilin; Lu, Yue; Liang, Hao; Li, Wenzhuo Adobe PDF(4855Kb) \| 收藏 \| 浏览/下载：569/126 \| 提交时间：2024/04/26 Efficiency Energy gap Extraction Field effect transistors Heterojunctions Metal halides Molecules Open circuit voltage Optoelectronic devices Perovskite solar cells Semiconductor doping Wide band gap semiconductors Carrier extraction Field-effect transistor Halide perovskites High quality Low dimensional Optoelectronics devices Perovskite films Surface layers Tandem solar cells Wide-band-gap
	Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory 期刊论文 ACS APPLIED ELECTRONIC MATERIALS, 2024, 卷号: 6, 期号: 4, 页码: 2507-2513 作者: Li, Zhengxin; Chen, Yangyang; Yuan, Jian; Xu, Wanting; Yang, Xiaoqing Adobe PDF(5006Kb) \| 收藏 \| 浏览/下载：295/0 \| 提交时间：2024/04/26 Electric fields Ferroelectric materials Ferroelectricity Field effect transistors Graphene Memristors Nonvolatile storage Ferroelectric switching Few-layer graphene Memristor Non-volatile memory Out-of-plane Switching behaviors Two-dimensional materials Two-dimensional semiconductors Vdw heterostructure Α-in2se3
	Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, 2024, 卷号: 71, 期号: 1, 页码: 348-358 作者: Peng, Xiaoxuan; Ge, Xiaohu; Ha, Yajun Adobe PDF(1654Kb) \| 收藏 \| 浏览/下载：315/1 \| 提交时间：2024/04/12 Circuit simulation CMOS integrated circuits Computer circuits Digital communication systems Digital integrated circuits Energy utilization Field effect transistors Logic circuits Logic gates MOS devices Optimization Oxide semiconductors Signal encoding Single electron transistors Stochastic models Stochastic systems Thermodynamics Timing circuits Energy consumption model Energy consumption optimization Energy-consumption Integrated circuit modeling Parity check Parity check circuit Parity check codes Single-electron transistors Stochastic thermodynamics XOR gates
	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024 作者: Ke Li; Yi Ma; Xinbo Zou JPEG(176Kb) \| 收藏 \| 浏览/下载：160/0 \| 提交时间：2024/09/19 High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture

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