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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
Microsoft Word(2182Kb)  |  收藏  |  浏览/下载:87/1  |  提交时间:2025/03/07
A novel Li-ion based transistor within LiCoO2/Li6.75La3Zr1.5Ta0.5O12/Ag scheme 期刊论文
PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 194-200
作者:  
Adobe PDF(1445Kb)  |  收藏  |  浏览/下载:58/1  |  提交时间:2025/01/10
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载:78/4  |  提交时间:2025/02/12
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong;  Ouyang, Keqing;  Zou, Xinbo;  Ma, Hongping
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载:267/1  |  提交时间:2024/10/08
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文
JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25
作者:  Wang, Qian;  Hua, Hao;  Zheng, Li;  Feng, Junhong;  Zhang, Cheng
Adobe PDF(2608Kb)  |  收藏  |  浏览/下载:1722/2  |  提交时间:2024/04/12
Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024
作者:  Ke Li;  Yi Ma;  Xinbo Zou
JPEG(176Kb)  |  收藏  |  浏览/下载:158/0  |  提交时间:2024/09/19
Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells 期刊论文
NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 5
作者:  Jiang, Xianyuan;  Zhou, Qilin;  Lu, Yue;  Liang, Hao;  Li, Wenzhuo
Adobe PDF(4855Kb)  |  收藏  |  浏览/下载:561/121  |  提交时间:2024/04/26
One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories 期刊论文
NANO LETTERS, 2024, 卷号: 24, 期号: 15, 页码: 4498-4504
作者:  Qiao, Shuo;  Qiu, Yuanyuan
Adobe PDF(5145Kb)  |  收藏  |  浏览/下载:309/8  |  提交时间:2024/04/23
Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory 期刊论文
ACS APPLIED ELECTRONIC MATERIALS, 2024, 卷号: 6, 期号: 4, 页码: 2507-2513
作者:  Li, Zhengxin;  Chen, Yangyang;  Yuan, Jian;  Xu, Wanting;  Yang, Xiaoqing
Adobe PDF(5006Kb)  |  收藏  |  浏览/下载:287/0  |  提交时间:2024/04/26
Modeling and Optimization of XOR Gate Based on Stochastic Thermodynamics 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS, 2024, 卷号: 71, 期号: 1, 页码: 348-358
作者:  Peng, Xiaoxuan;  Ge, Xiaohu;  Ha, Yajun
Adobe PDF(1654Kb)  |  收藏  |  浏览/下载:309/1  |  提交时间:2024/04/12
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