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	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99 作者: Wenbo Ye; Junmin Zhou; Han Gao Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：67/4 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	A novel Li-ion based transistor within LiCoO2/Li6.75La3Zr1.5Ta0.5O12/Ag scheme 期刊论文 PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 194-200 作者: Yin, Jixiang; Song, Houning; Li, Peirong; Xing, Yuzhi; Chen, Supeng Adobe PDF(1445Kb) \| 收藏 \| 浏览/下载：46/1 \| 提交时间：2025/01/10 Atomic emission spectroscopy Field effect transistors Silver compounds Tantalum compounds X ray absorption spectroscopy Channel layers Electronics devices Ion-transport Ionics devices LiCoO 2 Physical limits Resistive state Solid state batteries Tunneling effects X-ray spectroscopy
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：246/1 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	DEFECTS-RICH Ru NANOPLATE DRIVED HIGHLY DISPERSED Pt ATOMS TO BOOST HYDROGEN EVOLUTION REACTION 期刊论文 TAIYANGNENG XUEBAO/ACTA ENERGIAE SOLARIS SINICA, 2024, 卷号: 45, 期号: 9, 页码: 14-19 作者: Wang, Qiansen; Cheng, Qingqing; Li, Jun; Yang, Hui Adobe PDF(2351Kb) \| 收藏 \| 浏览/下载：188/2 \| 提交时间：2024/10/25 Electron resonance High resolution transmission electron microscopy Hydrogen evolution reaction Paramagnetic resonance Platinum Ruthenium Single electron transistors Atom utilization Deposition methods Electroless Hydrogen evolution reactions Nanoplates Platinum atoms Ru nanoparticles Single electron State of the art Utilization efficiency
	Dopant-mediated carrier tunneling in short-channel two-dimensional transistors 期刊论文 MATERIALS CHEMISTRY FRONTIERS, 2024, 卷号: 8, 期号: 20, 页码: 3300-3307 作者: Lu, Yue; Li, Chenyu; Yang, Shenbo; Yuan, Mingxuan; Qiao, Shuo Adobe PDF(3777Kb) \| 收藏 \| 浏览/下载：219/4 \| 提交时间：2024/08/26 Heterojunctions Layered semiconductors MOS devices Quantum electronics Short circuit currents Silicon wafers Surface discharges Transistors Carrier tunnelling Density-functional theory calculations Dopant atoms MoS 2 Node technology Quantum transport simulations Short channels Silicon-based electronics Two-dimensional Two-dimensional semiconductors
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1590/2 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：239/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection
	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024 作者: Ke Li; Yi Ma; Xinbo Zou JPEG(176Kb) \| 收藏 \| 浏览/下载：151/0 \| 提交时间：2024/09/19 High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture
	Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells 期刊论文 NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 5 作者: Jiang, Xianyuan; Zhou, Qilin; Lu, Yue; Liang, Hao; Li, Wenzhuo Adobe PDF(4855Kb) \| 收藏 \| 浏览/下载：520/105 \| 提交时间：2024/04/26 Efficiency Energy gap Extraction Field effect transistors Heterojunctions Metal halides Molecules Open circuit voltage Optoelectronic devices Perovskite solar cells Semiconductor doping Wide band gap semiconductors Carrier extraction Field-effect transistor Halide perovskites High quality Low dimensional Optoelectronics devices Perovskite films Surface layers Tandem solar cells Wide-band-gap
	One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories 期刊论文 NANO LETTERS, 2024, 卷号: 24, 期号: 15, 页码: 4498-4504 作者: Qiao, Shuo; Qiu, Yuanyuan; Lu, Yue; Wang, Zihan; Yuan, Mingxuan Adobe PDF(5145Kb) \| 收藏 \| 浏览/下载：291/8 \| 提交时间：2024/04/23 Charge trapping Field effect transistors Molybdenum disulfide 2d material Charge-trapping Device application Nanoscrolls One-dimensional Optoelectronics property Rolling process Rolling up Solvent evaporation Two-dimensional

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