消息 ×
	loading..

验证码:

换一张

忘记密码？记住我

取消登录

统一认证登录

取消

中文版 | English

上海科技大学知识管理系统

ShanghaiTech University Knowledge Management System

统一认证登录登录注册

图片搜索

粘贴图片网址

首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅

在结果中检索

研究单元&专题

物质科学与技术学院 [29]

信息科学与技术学院 [21]

大科学中心 [2]

作者

文献类型

期刊论文 [43]

会议论文 [7]

发表日期

出处

HONGWAI YU... [3]

ACS APPLIE... [2]

OPTICS EXP... [2]

2016 7TH I... [1]

2018 14TH ... [1]

2022 7TH I... [1]

语种

资助项目

National N... [2]

National N... [2]

Strategic ... [2]

Basic Rese... [1]

Center for... [1]

China Post... [1]

资助机构

收录类别

EI [46]

北大核心 [3]

状态

知识图谱

KMS

浏览/检索结果: 共50条，第1-10条

帮助

已选(0)清除条数/页：排序方式：
	A PMOS-Based Deep Cryogenic CMOS Temperature Sensor Achieving a Range from 10K to 410K with a Relative Inaccuracy of 0.5% (3σ) 会议论文 2025 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), Boston, MA, USA, 13-17 April 2025 作者: Xingyu Qi; Yingzhe Sha; Xufeng Kou; Xiaoyong Xue; Peng Wang Adobe PDF(10806Kb) \| 收藏 \| 浏览/下载：25/1 \| 提交时间：2025/05/26 Heterojunctions Integrated circuit interconnects Liquefied natural gas Liquid nitrogen Power integrated circuits Quantum computers Semiconductor insulator boundaries Superfluid helium Transistors Cryogenic temperatures High temperature sensitivity Integrated circuit chips Liquid helium Quantum computing circuits Read-out circuit Temperature decrease Temperature range Temperature regions Temperature sensing
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：99/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：85/5 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	A novel Li-ion based transistor within LiCoO2/Li6.75La3Zr1.5Ta0.5O12/Ag scheme 期刊论文 PROGRESS IN NATURAL SCIENCE: MATERIALS INTERNATIONAL, 2025, 卷号: 35, 期号: 1, 页码: 194-200 作者: Yin, Jixiang; Song, Houning; Li, Peirong; Xing, Yuzhi; Chen, Supeng Adobe PDF(1445Kb) \| 收藏 \| 浏览/下载：65/1 \| 提交时间：2025/01/10 Atomic emission spectroscopy Field effect transistors Silver compounds Tantalum compounds X ray absorption spectroscopy Channel layers Electronics devices Ion-transport Ionics devices LiCoO 2 Physical limits Resistive state Solid state batteries Tunneling effects X-ray spectroscopy
	Dopant-mediated carrier tunneling in short-channel two-dimensional transistors 期刊论文 MATERIALS CHEMISTRY FRONTIERS, 2024, 卷号: 8, 期号: 20, 页码: 3300-3307 作者: Lu, Yue; Li, Chenyu; Yang, Shenbo; Yuan, Mingxuan; Qiao, Shuo Adobe PDF(3777Kb) \| 收藏 \| 浏览/下载：249/4 \| 提交时间：2024/08/26 Heterojunctions Layered semiconductors MOS devices Quantum electronics Short circuit currents Silicon wafers Surface discharges Transistors Carrier tunnelling Density-functional theory calculations Dopant atoms MoS 2 Node technology Quantum transport simulations Short channels Silicon-based electronics Two-dimensional Two-dimensional semiconductors
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：286/2 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	DEFECTS-RICH Ru NANOPLATE DRIVED HIGHLY DISPERSED Pt ATOMS TO BOOST HYDROGEN EVOLUTION REACTION 期刊论文 TAIYANGNENG XUEBAO/ACTA ENERGIAE SOLARIS SINICA, 2024, 卷号: 45, 期号: 9, 页码: 14-19 作者: Wang, Qiansen; Cheng, Qingqing; Li, Jun; Yang, Hui Adobe PDF(2351Kb) \| 收藏 \| 浏览/下载：227/2 \| 提交时间：2024/10/25 Electron resonance High resolution transmission electron microscopy Hydrogen evolution reaction Paramagnetic resonance Platinum Ruthenium Single electron transistors Atom utilization Deposition methods Electroless Hydrogen evolution reactions Nanoplates Platinum atoms Ru nanoparticles Single electron State of the art Utilization efficiency
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364 作者: Yu Zhang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：318/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文 JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25 作者: Wang, Qian; Hua, Hao; Zheng, Li; Feng, Junhong; Zhang, Cheng Adobe PDF(2608Kb) \| 收藏 \| 浏览/下载：1826/4 \| 提交时间：2024/04/12 Hafnium compounds Junction gate field effect transistors MOSFET devices Silicon 4h-SiC 4H-SiC MOSFET BFOM Conventional MOSFETs High frequency HF High-frequency figure of merit Ions implantation Measured results MOS structure RG-MOS
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：268/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection

首页
上一页
1
2
3
4
5
下一页
末页

首页
研究单元产出分布图
收录类型分布图
论文引用排行
作者
文献类型
学科分类
使用帮助
联系我们

条目量28515
全文量27331
访问量16749854
下载量1128394

Copyright © 上海科技大学版权所有沪ICP备13001436号-1 沪公网安备 31011502006855号

地址邮编: 上海市浦东新区华夏中路393号
电话: 86-21-20685191