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A 9-V Wireless Power Receiver IC With 74.2% Power Conversion Efficiency and Integrated Bidirectional Telemetries for Implantable Neurostimulation Systems in Standard CMOS
期刊论文
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 卷号: 34, 期号: 8, 页码: 1051-1054
作者:
Yi Ding
;
Tianyi Li
;
Xinqin Guo
;
Hongming Lyu
Adobe PDF(7419Kb)
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浏览/下载:237/15
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提交时间:2024/07/02
Amplitude shift keying
CMOS integrated circuits
Conversion efficiency
Electric current regulators
Electric loads
Energy transfer
Inductive power transmission
Rectifying circuits
Regulatory compliance
Telemetering equipment
Voltage regulators
CMOS technology
Electrical resistance measurement
High voltage techniques
High-voltage compliance
High-voltages
Implantable medical device
Implantable medical devices
Load shift keying
Load-shift keying
Near fields
Near-field telemetry
On/off-keying
On–off keying
Receiver
Rectifier
Voltage compliance
Wireless communications
Wireless power transfer
Radiation effects of high-fluence reactor neutron on Ni/β-Ga
2
O
3
Schottky barrier diodes
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 1
作者:
Zhou, Leidang
;
Chen, Hao
;
Xu, Tongling
;
Ruan, Jinlu
;
Lai, Yuru
Adobe PDF(1Kb)
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浏览/下载:241/39
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提交时间:2024/03/04
Capacitance
Electric resistance
Gallium compounds
Neutron irradiation
Neutrons
Radiation effects
% reductions
Electrical characteristic
Energy spectrum
Fluences
Forward currents
Higher-on resistance
Irradiation effect
Neutron fluences
Orders of magnitude
Reactor neutrons
Numerical Simulation on Flow Resistance of Helium Cryogenic Transfer Lines
专著章节
出自: Advanced Topics in Science and Technology in China:Springer Science and Business Media Deutschland GmbH, 2023, 页码: 109-116
作者:
Xu, Sheng
;
Chen, Mengjia
;
Zhang, Lei
收藏
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浏览/下载:278/0
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提交时间:2024/02/02
Cryogenics
Numerical models
Temperature
Tubes (components)
Cryogenic system
Cryogenic transfer line
Empirical formulas
Flow characteristic
Flow resistance
Large-scales
Lows-temperatures
On flow
Straight tubes
Transfer lines
Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码: 5590-5595
作者:
Yu Zhang
;
Yitian Gu
;
Jiaxiang Chen
;
Yitai Zhu
;
Baile Chen
Adobe PDF(1973Kb)
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浏览/下载:207/1
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提交时间:2023/10/07
Dynamic ON-resistance ( $\textit{R}_{\biosc{on}}$ )
GaN
metal–oxide–semiconductor high-electron mobility transistor (MOSHEMT)
threshold voltage ( $\textit{V}_{\text{th}}$ ) instability
ZrOTEXPRESERVE13 dielectric
Improve the On-Resistance for 80V NLDMOS with STI Technology in 0.18 UM BCD Process
会议论文
2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022
作者:
Xiaoming Zhang
;
Donghua Liu
;
Haiyang Ling
;
Wensheng Qian
Adobe PDF(3354Kb)
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浏览/下载:225/0
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提交时间:2022/09/30
BCD process
Condition
High frequency HF
High-voltages
Low currents
On-resistance
Power applications
Save energy
SIMPLE method
Specific-on-resistance
Low-Loss SAW Devices with LiTaO3on Extremely High Resistance Substrate
会议论文
IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, IUS, Virtual, Online, China, September 11, 2011 - September 16, 2011
作者:
Wu, Jinbo
;
Zhang, Shibin
;
Zhou, Hongyan
;
Zhang, Liping
;
Zheng, Pengcheng
Adobe PDF(1323Kb)
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收藏
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浏览/下载:420/1
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提交时间:2022/07/01
Acoustic surface wave filters
Bandwidth
Lithium compounds
Resonators
Tantalum compounds
Acoustic filters
High resistance
Litao3 on sapphire
Low loss SAW
Low-loss
Parasitic surface conduction
Parasitic surface conduction effect
Sapphire substrates
SAW device
Simple structures
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