KMS

浏览/检索结果: 共6条,第1-6条 帮助

已选(0)清除 条数/页:   排序方式:
A 9-V Wireless Power Receiver IC With 74.2% Power Conversion Efficiency and Integrated Bidirectional Telemetries for Implantable Neurostimulation Systems in Standard CMOS 期刊论文
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 卷号: 34, 期号: 8, 页码: 1051-1054
作者:  Yi Ding;  Tianyi Li;  Xinqin Guo;  Hongming Lyu
Adobe PDF(7419Kb)  |  收藏  |  浏览/下载:237/15  |  提交时间:2024/07/02
Radiation effects of high-fluence reactor neutron on Ni/β-Ga2O3 Schottky barrier diodes 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 1
作者:  Zhou, Leidang;  Chen, Hao;  Xu, Tongling;  Ruan, Jinlu;  Lai, Yuru
Adobe PDF(1Kb)  |  收藏  |  浏览/下载:241/39  |  提交时间:2024/03/04
Numerical Simulation on Flow Resistance of Helium Cryogenic Transfer Lines 专著章节
出自: Advanced Topics in Science and Technology in China:Springer Science and Business Media Deutschland GmbH, 2023, 页码: 109-116
作者:  Xu, Sheng;  Chen, Mengjia;  Zhang, Lei
收藏  |  浏览/下载:278/0  |  提交时间:2024/02/02
Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码: 5590-5595
作者:  Yu Zhang;  Yitian Gu;  Jiaxiang Chen;  Yitai Zhu;  Baile Chen
Adobe PDF(1973Kb)  |  收藏  |  浏览/下载:207/1  |  提交时间:2023/10/07
Improve the On-Resistance for 80V NLDMOS with STI Technology in 0.18 UM BCD Process 会议论文
2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022
作者:  Xiaoming Zhang;  Donghua Liu;  Haiyang Ling;  Wensheng Qian
Adobe PDF(3354Kb)  |  收藏  |  浏览/下载:225/0  |  提交时间:2022/09/30
Low-Loss SAW Devices with LiTaO3on Extremely High Resistance Substrate 会议论文
IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, IUS, Virtual, Online, China, September 11, 2011 - September 16, 2011
作者:  Wu, Jinbo;  Zhang, Shibin;  Zhou, Hongyan;  Zhang, Liping;  Zheng, Pengcheng
Adobe PDF(1323Kb)  |  收藏  |  浏览/下载:420/1  |  提交时间:2022/07/01
  • 首页
  • 上一页
  • 1
  • 下一页
  • 末页