| |||||||
ShanghaiTech University Knowledge Management System
| Low-Loss SAW Devices with LiTaO3on Extremely High Resistance Substrate | |
| 2021-09 | |
| 会议录名称 | IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, IUS |
| ISSN | 1948-5719 |
| 发表状态 | 已发表 |
| DOI | 10.1109/IUS52206.2021.9593793 |
| 摘要 | In this work, a simple structure of ultra-thin LiTaO3(LT) film on extremely high-resistance sapphire substrate (LTOS) was proposed. The PSC effect has little effect on the effective resistivity (peff) of the LT /sapphire interface in LTOS since the resistivity of sapphire is greater than 1014 O. cm (lack of sufficient free carriers), therefore the RF loss in LTOS substrate is limited. The 4-inch LTOS substrate was prepared by ion-cutting process, and high-Q resonators and a low insertion loss (IL) filter were demonstrated on the LTOS substrate. The resonator exhibits an extracted k2 of 6.62 % and a maximum Bode-Q (Qmax) of 2100, resulting in a FoM (k2×Qmax) of 139. The filter with a center frequency of 2231 MHz features a minimum IL of 0.61 dB and a 3-dB fractional bandwidth (FBW) of 3.6%. The SAW devices on LTOS substrate show a great potential for applications in RF wireless communications. © 2021 IEEE. |
| 会议录编者/会议主办者 | IEEE ; IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC) |
| 关键词 | Acoustic surface wave filters Bandwidth Lithium compounds Resonators Tantalum compounds Acoustic filters High resistance Litao3 on sapphire Low loss SAW Low-loss Parasitic surface conduction Parasitic surface conduction effect Sapphire substrates SAW device Simple structures |
| 会议名称 | 2021 IEEE International Ultrasonics Symposium, IUS 2021 |
| 出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 会议地点 | Virtual, Online, China |
| 会议日期 | September 11, 2011 - September 16, 2011 |
| URL | 查看原文 |
| 收录类别 | EI ; CPCI ; CPCI-S |
| 语种 | 英语 |
| 资助项目 | National Key R&D Program of China[ |
| WOS研究方向 | Acoustics ; Engineering ; Remote Sensing |
| WOS类目 | Acoustics ; Engineering, Biomedical ; Engineering, Electrical & Electronic ; Remote Sensing |
| WOS记录号 | WOS:000832095000446 |
| 出版者 | IEEE Computer Society |
| EI入藏号 | 20220311481565 |
| EI主题词 | Sapphire |
| EISSN | 1948-5727 |
| EI分类号 | 482.2.1 Gems ; 716.1 Information Theory and Signal Processing ; 752.1 Acoustic Devices |
| 原始文献类型 | Conference article (CA) |
| 来源库 | IEEE |
| 引用统计 | 正在获取...
|
| 文献类型 | 会议论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/195177 |
| 专题 | 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_吴涛组 |
| 通讯作者 | Zhang, Shibin; Ou, Xin |
| 作者单位 | 1.Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China |
| 第一作者单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Wu, Jinbo,Zhang, Shibin,Zhou, Hongyan,et al. Low-Loss SAW Devices with LiTaO3on Extremely High Resistance Substrate[C]//IEEE, IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society (UFFC). 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE Computer Society,2021. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。