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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
浏览  |  Microsoft Word(2182Kb)  |  收藏  |  浏览/下载:98/1  |  提交时间:2025/03/07
A Deep Investigation on Stealthy DVFS Fault Injection Attacks at DNN Hardware Accelerators 期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2025, 卷号: 44, 期号: 1, 页码: 39-51
作者:  Junge Xu;  Fan Zhang;  Wenguang Jin;  Kun Yang;  Zeke Wang
Adobe PDF(2572Kb)  |  收藏  |  浏览/下载:335/4  |  提交时间:2024/07/15
Protecting Parallel Data Encryption in Multi-Tenant FPGAs by Exploring Simple but Effective Clocking Methodologies 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2024, 卷号: 32, 期号: 10, 页码: 1919-1929
作者:  Yankun Zhu;  Pingqiang Zhou
Adobe PDF(1620Kb)  |  收藏  |  浏览/下载:220/4  |  提交时间:2024/07/08
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong;  Ouyang, Keqing;  Zou, Xinbo;  Ma, Hongping
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载:286/2  |  提交时间:2024/10/08
Computer-Aided Design of Cross-Voltage-Domain Energy-Optimized Tapered Buffers 期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2024, 卷号: E107C, 期号: 9, 页码: 245-254
作者:  Cao, Zhibo;  Han, Pengfei;  Lyu, Hongming
Adobe PDF(3505Kb)  |  收藏  |  浏览/下载:272/6  |  提交时间:2024/09/20
Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction 预印本
2023
作者:  Yu, Shujie;  Chen, Lei;  Pan, Yinping;  Wang, Yue;  Zhang, Denghui
Adobe PDF(842Kb)  |  收藏  |  浏览/下载:209/0  |  提交时间:2024/06/03
Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction 期刊论文
NANO LETTERS, 2023, 卷号: 23, 期号: 17, 页码: 8043-8049
作者:  Yu, Shujie;  Chen, Lei;  Pan, Yinping;  Wang, Yue;  Zhang, Denghui
Adobe PDF(842Kb)  |  收藏  |  浏览/下载:527/166  |  提交时间:2023/09/08
RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2023, 卷号: 44, 期号: 9, 页码: 1412-1415
作者:  Junmin Zhou;  Haowen Guo;  Haitao Du;  Yu Zhang;  Haolan Qu
Adobe PDF(1317Kb)  |  收藏  |  浏览/下载:399/2  |  提交时间:2023/07/28
Universal relation between doping content and normal-state resistance in gate voltage tuned ultrathin Bi2Sr2CaCu2 O8+x flakes 期刊论文
PHYSICAL REVIEW B, 2022, 卷号: 106, 期号: 10
作者:  Wang, Teng;  Yu, Aobo;  Liu, Yixin;  Gu, Genda;  Peng, Wei
Adobe PDF(751Kb)  |  收藏  |  浏览/下载:304/0  |  提交时间:2022/10/14
Study of the Degradation in LDMOS with STI Technology and Improve the Reliability with Several Methods 会议论文
2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022
作者:  Xiaoming Zhang;  Donghua Liu;  Wensheng Qian
Adobe PDF(2459Kb)  |  收藏  |  浏览/下载:322/0  |  提交时间:2022/09/30
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