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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
浏览
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Microsoft Word(2182Kb)
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浏览/下载:98/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
A Deep Investigation on Stealthy DVFS Fault Injection Attacks at DNN Hardware Accelerators
期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2025, 卷号: 44, 期号: 1, 页码: 39-51
作者:
Junge Xu
;
Fan Zhang
;
Wenguang Jin
;
Kun Yang
;
Zeke Wang
Adobe PDF(2572Kb)
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浏览/下载:335/4
|
提交时间:2024/07/15
Acceleration
Deep neural networks
Dynamic frequency scaling
Field programmable gate arrays (FPGA)
Frequency converters
Image recognition
Network security
Software testing
Timing circuits
Voltage scaling
Circuit faults
Deep learning
Deep learning accelerator
Digital converters
Dynamic voltage and frequency scaling
Fault injection attacks
Field programmable gate array
Field programmables
Hardware acceleration
Programmable gate array
Time-to-digital
Time-to-digital converter
Protecting Parallel Data Encryption in Multi-Tenant FPGAs by Exploring Simple but Effective Clocking Methodologies
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2024, 卷号: 32, 期号: 10, 页码: 1919-1929
作者:
Yankun Zhu
;
Pingqiang Zhou
Adobe PDF(1620Kb)
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浏览/下载:220/4
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提交时间:2024/07/08
Encryption
Field programmable gate arrays
Clocks
Sensors
Frequency modulation
Side-channel attacks
Voltage fluctuations
Clocking phase shift
correlation power analysis (CPA)
multi-tenant field-programmable gate array (FPGA)
parallel encryption
remote side-channel attack
small frequency shift
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
;
Ouyang, Keqing
;
Zou, Xinbo
;
Ma, Hongping
Adobe PDF(2565Kb)
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浏览/下载:286/2
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提交时间:2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
Computer-Aided Design of Cross-Voltage-Domain Energy-Optimized Tapered Buffers
期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2024, 卷号: E107C, 期号: 9, 页码: 245-254
作者:
Cao, Zhibo
;
Han, Pengfei
;
Lyu, Hongming
Adobe PDF(3505Kb)
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浏览/下载:272/6
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提交时间:2024/09/20
Buffer circuits
CMOS integrated circuits
Energy utilization
Integrated circuit design
Power systems computer aided design
Structural dynamics
Computer-aided
Computer-aided design
Energy
Gate drivers
Level shifter
Low-power circuit
Short-circuit power
Switching-mode
Tapered buffer
Voltage domains
Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction
预印本
2023
作者:
Yu, Shujie
;
Chen, Lei
;
Pan, Yinping
;
Wang, Yue
;
Zhang, Denghui
Adobe PDF(842Kb)
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浏览/下载:209/0
|
提交时间:2024/06/03
Josephson junction
Gate voltage
Critical current
3D nano-bridge junction
Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction
期刊论文
NANO LETTERS, 2023, 卷号: 23, 期号: 17, 页码: 8043-8049
作者:
Yu, Shujie
;
Chen, Lei
;
Pan, Yinping
;
Wang, Yue
;
Zhang, Denghui
Adobe PDF(842Kb)
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收藏
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浏览/下载:527/166
|
提交时间:2023/09/08
Josephson junction
Gate voltage
Criticalcurrent
3D nanobridge junction
RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2023, 卷号: 44, 期号: 9, 页码: 1412-1415
作者:
Junmin Zhou
;
Haowen Guo
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
Adobe PDF(1317Kb)
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浏览/下载:399/2
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提交时间:2023/07/28
Gallium nitride
III-V semiconductors
Leakage currents
Low noise amplifiers
Noise figure
Threshold voltage
Enhancement-mode
Gain
Gate
Gate-leakage
High electron-mobility transistors
Linearity
Low noiseamplifier
Performances evaluation
Radiofrequencies
RF low noise amplifier
Universal relation between doping content and normal-state resistance in gate voltage tuned ultrathin Bi2Sr2CaCu2 O8+x flakes
期刊论文
PHYSICAL REVIEW B, 2022, 卷号: 106, 期号: 10
作者:
Wang, Teng
;
Yu, Aobo
;
Liu, Yixin
;
Gu, Genda
;
Peng, Wei
Adobe PDF(751Kb)
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浏览/下载:304/0
|
提交时间:2022/10/14
Binary alloys
Copper compounds
Phase transitions
Quantum theory
Superconducting materials
Ternary alloys
Threshold voltage
Doping content
Electronic phase diagram
Fixed temperature
Gate voltages
High-Tc cuprates
Normal-state resistance
Precise determinations
Superconductor insulator transitions
Ultra-thin
Voltage-tunable
Study of the Degradation in LDMOS with STI Technology and Improve the Reliability with Several Methods
会议论文
2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022
作者:
Xiaoming Zhang
;
Donghua Liu
;
Wensheng Qian
Adobe PDF(2459Kb)
|
收藏
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浏览/下载:322/0
|
提交时间:2022/09/30
Electronic design automation
Integrated circuits
MOS devices
Degradation model
Drain voltage
Electronic simulation
Gate drain
Gate voltages
Hot carrier stress
Lateral double diffused mos (LDMOS)
Mechanism of degradation
Technology nodes
Voltage stress
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