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合作作者[TOP 5]

  • Yue, Li

    合作成果数：7

  • 王庶民

    合作成果数：6

  • Ou, Xin

    合作成果数：5

  • Chen, Xiren

    合作成果数：4

  • Shao, Jun

    合作成果数：4

访问统计


  总访问量
 595
  访问来源
    内部： 1
    外部： 594
    国内： 434
    国外： 161

  年访问量
 58
  访问来源
    内部： 0
    外部： 58
    国内： 48
    国外： 10

  月访问量
 0
  访问来源
    内部： 0
    外部： 0
    国内： 0
    国外： 0

访问量

访问量

1. Electrically injected GaAsBi/GaAs single quantum well laser diodes [994]
2. Molecular beam epitaxy growth of AlAs1-xBix [566]
3. Wavelength extension in GaSbBi quantum wells using delta-doping [559]
4. Structural and optical properties of GaSbBi/GaSb quantum wells [In.. [535]
5. Progress on III-V-Bi Alloys and Light Emitting Devices [505]
6. Molecular beam epitaxy growth of GaSb1-xBix .. [469]
7. Growth and properties of AlSbBi thin films by molecular beam epita.. [449]
8. Molecular beam epitaxy growth and optical properties of high bismu.. [391]
9. MBE生长GaAsBi过程中Bi组分对背景杂质含量的影响 [311]

下载量

1. Growth and properties of AlSbBi thin films by molecular beam epita.. [7]
2. Molecular beam epitaxy growth of GaSb1-xBix .. [5]
3. Molecular beam epitaxy growth of AlAs1-xBix [3]
4. Structural and optical properties of GaSbBi/GaSb quantum wells [In.. [2]
5. Electrically injected GaAsBi/GaAs single quantum well laser diodes [1]
6. Wavelength extension in GaSbBi quantum wells using delta-doping [1]
7. Molecular beam epitaxy growth and optical properties of high bismu.. [1]
8. Progress on III-V-Bi Alloys and Light Emitting Devices [1]
9. MBE生长GaAsBi过程中Bi组分对背景杂质含量的影响 [1]