Electrically injected GaAsBi/GaAs single quantum well laser diodes

doi:10.1063/1.4985231

	Electrically injected GaAsBi/GaAs single quantum well laser diodes
	Liu, Juanjuan 1,2; Pan, Wenwu 1,2; Wu, Xiaoyan 1,2; Cao, Chunfang 1; Li, Yaoyao 1; Chen, Xiren 2,3; Zhang, Yanchao1,4 ; Wang, Lijuan 1; Yan, Jinyi 1; Zhang, Dongliang 1,2; Song, Yuxin 1; Shao, Jun 2,3; Wang, Shumin1,5
	2017-11
发表期刊	AIP ADVANCES (IF:1.4[JCR-2023],1.4[5-Year])
ISSN	2158-3226
卷号	7 期号:11
发表状态	已发表
DOI	10.1063/1.4985231
摘要	We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm(-1) and transparency current density of 196 A/cm(2). The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77 similar to 150 K, and reduced to 90Kin the range of 150 similar to 273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77 similar to 273 K. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
收录类别	SCI ; EI
语种	英语
资助项目	Natural Science Foundation of China[61404152]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000416825700006
出版者	AMER INST PHYSICS
EI入藏号	20174504377422
EI主题词	Gallium arsenide ; Molecular beam epitaxy ; Quantum well lasers ; Temperature
EI分类号	Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Lasers, General:744.1 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3
WOS关键词	THRESHOLD CURRENT-DENSITY ; MOLECULAR-BEAM EPITAXY ; DOT LASERS ; PHOTOLUMINESCENCE ; RECOMBINATION ; EFFICIENCY
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/14291
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生
通讯作者	Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 5.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式 GB/T 7714	Liu, Juanjuan,Pan, Wenwu,Wu, Xiaoyan,et al. Electrically injected GaAsBi/GaAs single quantum well laser diodes[J]. AIP ADVANCES,2017,7(11).
APA	Liu, Juanjuan.,Pan, Wenwu.,Wu, Xiaoyan.,Cao, Chunfang.,Li, Yaoyao.,...&Wang, Shumin.(2017).Electrically injected GaAsBi/GaAs single quantum well laser diodes.AIP ADVANCES,7(11).
MLA	Liu, Juanjuan,et al."Electrically injected GaAsBi/GaAs single quantum well laser diodes".AIP ADVANCES 7.11(2017).